Average Co-Inventor Count = 2.17
ph-index = 18
The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.
Company Filing History:
1. Canon Kabushiki Kaisha (21 from 90,594 patents)
2. Nikon Corporation (13 from 8,889 patents)
3. Hitachi, Ltd. (12 from 42,485 patents)
4. Kabushiki Kaisha Toshiba (9 from 52,711 patents)
5. Dia Semicon Systems Incorporated (5 from 6 patents)
6. Renesas Technology Corp. (4 from 3,781 patents)
7. Chiyoda Corporation (2 from 168 patents)
8. Dena Co., Ltd. (2 from 166 patents)
9. Nec Corporation (1 from 35,658 patents)
10. Hitachi Metals, Ltd. (1 from 2,333 patents)
11. Konami Digital Entertainment Co., Ltd. (1 from 528 patents)
12. Konami Co., Ltd. (1 from 253 patents)
13. Konami Corporation (1 from 193 patents)
14. Hitachi Power Semiconductor Device, Ltd. (1 from 45 patents)
15. Konami Computer Entertainmant Tokyo, Inc. (1 from 1 patent)
74 patents:
1. 11565323 - Method of molding anisotropic composite material and die using anisotropic composite material
2. 11420282 - Soldering device
3. 11244877 - Sealing structure and manufacturing method thereof
4. 10167777 - System and method for producing hydrogen
5. 10153236 - Semiconductor device and power electronics apparatus
6. 10131593 - Systems and methods for producing hydrogen from a hydrocarbon and using the produced hydrogen in a hydrogenation reaction
7. 10002817 - Semiconductor device
8. 9973673 - Image signal recording/reproduction apparatus, method employed therein, and image signal recording apparatus
9. 9393645 - Junction material, manufacturing method thereof, and manufacturing method of junction structure
10. 9278290 - Game system
11. 9184115 - Semiconductor device and method for manufacturing same
12. 9011239 - Game system
13. 8872956 - Electronic camera with self-explanation/diagnosis mode
14. 8704768 - Image processing apparatus and method
15. 8525330 - Connecting member for connecting a semiconductor element and a frame, formed of an Al-based layer and first and second Zn-based layers provided on surfaces of the Al-based layer