Kabushiki Kaisha Toshiba

Osamu Horiuchi

Akira Tanaka

Masaki Tohyama

Hideo Shiozawa

Makoto Okada

Akio Makuta

Koichi Gen-Ei

Yoshiyuki Itoh

According to one embodiment, a semiconductor laser device includes stacked layers and a light output layer. The stacked layers include an active layer. The light output layer is provided in contact with a light output end face of an optical cavity made of the stacked layers. The light output layer includes a dielectric layer having a non-amorphous film, and a conductor portion provided at least one of on a surface of the dielectric layer and inside the dielectric layer.

Semiconductor laser device

A semiconductor laser device comprises: a cladding layer of a first conductivity type; an active layer provided on the cladding layer; and a cladding layer of a second conductivity type provided on the active layer. At least a part of the cladding layer of the second conductivity type has a ridge stripe. The ridge stripe includes: an upper part having substantially vertical sidewalls; and a lower portion having sidewalls inclined so that the stripe becomes wider toward the active layer.

Semiconductor laser device and its manufacturing method

Growing community of inventors

Kanagawa-ken, Japan

Osamu Horiuchi