Kabushiki Kaisha Toshiba

Osamu Hirata

Masahiro Abe

Yasukazu Mase

Hitoshi Tsuji

Hiroshi Haraguchi

Hidetsuna Hashimoto

After forming a magnetic material contained layer on a substrate, a etching region of the magnetic material contained layer is scanned by a magnetic head, to arrange magnetic polarization in one direction. The magnetic material contained layer is separated into a ferro magnetic region which magnetic polarization is arranged in one direction, and a feeble magnetic region which magnetic polarization is not arranged in one direction. Thereafter, the ferro magnetic region is removed by use of a difference between etching rates caused by density of the magnetic fields of these two regions.

Method of making layer containing magnetic material

In a method for determining an end of cleaning of a semiconductor manufacturing apparatus according to the invention, when the interior of a semiconductor substrate process chamber of the semiconductor manufacturing apparatus is cleaned by dry etching using plasma discharge, a constant current or voltage is supplied from a high-frequency power source to discharge electrodes during plasma discharge, an impedance between the electrodes or a temperature in the process chamber is monitored, a time point at which the impedance or temperature is abruptly changed is detected, and this time point of detection is determined to be an end of cleaning.

Method of determining end of cleaning of semiconductor manufacturing

An apparatus for cleaning semiconductor devices has a mixing section for mixing a chemical solution with pure water. A semiconductor substrate to be cleaned is placed on a support. An ultrasonic generator applies ultrasonic vibrations to the supplied pure water. The mixing section mixes a predetermined chemical solution with the pure water applied with the ultrasonic vibrations and supplies a desired pure water solution onto the semiconductor substrate.

Method and apparatus for cleaning semiconductor devices

A manufacturing method of a semiconductor device of the present invention comprises a first step of exposing a periphery of a first region of a photoresist layer coating an insulating layer formed on a semiconductor substrate and a periphery of a second region for positioning, and a second step of heating said photoresist layer in ammonia atmosphere and forming an alkali insoluble portion in the periphery of the first region and that of the second region, a third step of exposing a third region, which is smaller than the first region, and the second region and developing these regions, a fourth step of etching the third region and the second region to a predetermined depth, and a fifth step of repeating the third and fourth steps once or more in a region, which is smaller than the third region, and the second region.

Growing community of inventors

Kawasaki, Japan

Osamu Hirata