Mitsubishi Denki Kabushiki Kaisha

Smk Corporation

Brain Base Corporation

Osamu Hayashi

Kazuo Okahashi

Naoyuki Ono

Hiroshi Adachi

Etsushi Adachi

Takeshi Morita

Susumu Hoshinouchi

Tadashi Iwabuchi

Junji Fujino

Hiroshi Ono

Ichiro Takahashi

Takayuki Nakano

Yoshiyuki Morihiro

Tetsuyuki Kurata

Yasuhisa Tamagawa

Kyoichi Shibayama

Toshiyuki Kobayashi

Shintaro Minami

Akira Adachi

Isao Ishii

Tsuneo Hamaguchi

Goro Okamoto

Sadamu Matsuda

Kenji Kagata

Minoru Fujita

Goro Izuta

Yoshiko Aiba

Kohei Murakami

Mitsuhiro Nonogaki

Masatoshi Sunamoto

Makoto Kamozawa

Mitsunori Ishizaki

Eiji Ichida

Toshitake Furusawa

Isao Furuta

Fumisada Ozawa

Takamasa Sasoh

An electrical connector includes an insulating main housing including a main body portion that has a holding hole open rearward and a plate-shaped fitting portion that protrudes forward from the main body portion and fits to a mating connector; a shield member that covers the main housing; an insulating sub housing that is arranged in the holding hole; and a plurality of conductive terminals that include connection portions arranged on the fitting portion and terminal portions protruding from the holding hole, and are held by the sub housing. The sub housing includes a first sub housing that is inserted into the holding hole from behind in a state of holding a part of the plurality of terminals, and a second sub housing that is inserted into the holding hole from behind in a state of holding the terminals other than the part of the plurality of terminals.

Electrical connector having simplified manufacturing processes

An electrical connector includes: a cylindrical metal shell having a mating portion extended from the front end to the rear end; and an inner sealing member that is brought into contact with a housing and the metal shell and hermetically seals between the housing and the metal shell. The mating portion is sealed by an outer peripheral joint and an inner peripheral joint so as to prevent the flow of a liquid from the front end side to the rear end side. Here, the outer peripheral joint is formed to some midpoint from the outer peripheral surface of the metal shell toward the inner peripheral surface of the metal shell, and the inner peripheral joint is formed from the inner peripheral surface to the outer peripheral joint on the contact portion with the inner sealing member.

Electrical connector and method for manufacturing same

A waterproof attachment portion to an enclosure is formed to implement the reduction in height, reduction in size, and positive waterproof effects at the same time. An electrical connector includes: an electrically conductive contact; an insulating housing for holding the contact; a metal shell which includes an opening opened frontward to allow a mating connector to be inserted therein and accommodates the housing; and a sealing member which is provided on the outer peripheral surface of the metal shell and protruded frontward from the metal shell.

Electrical connector

An electric connectorhas: terminalsthat include connection portionsarranged on one surface of a fitting partfor connection with a counterpart connector; terminalsthat include connection portionsarranged on a surface opposite to the one surface of the fitting partfor connection with the counterpart connector; a plate-like screen platethat is interposed between the first connection portionsand the second connection portionsof the fitting part; and a housingcomprises a primary molded portionin which the terminalsand the screen plateare integrally provided by insert molding and a secondary molded portionin which the primary molded portionand the terminalsare integrally provided by insert molding

Electric connector

An infrared transparent optical element for use as an optical window for an infrared imaging camera includes an infrared transparent substrate, an antireflection film, and a protective film of a polymer material. The infrared transparent substrate has first and second major surfaces opposite each other, and the antireflection film is disposed on each of the first and second major surfaces of the substrate. The protective film is on an outer surface of the antireflection film on the first major surface of the substrate.

Infrared transparent optical element and infrared imaging camera using the same

An implant includes a main body member having bio-compatibility, and particles formed of bioactive material and dispersedly provided at the surface of an embedded section of the main body member. Each of the particles has a part embedded in the embedded portion and the other part protruding from the embedded portion. The main body member is formed of titanium or titanium alloy. The particles having osteo-conduction are formed of a material selected from among a group consisting of sintered substances of hydroxylapatite, .alpha.-tricalcium phosphate, .beta.-tricalcium phosphate, tetra-calcium phosphate, a single substance of amorphous calcium phosphate, monetite, brushite, 45S4 glass, and a mixture of them. It is desirable that the embedded section surface has a surface roughness in a range of 5 to 50 .mu.m.

Implant with bioactive particles stuck and method of manufacturing the

A high-speed, high-density, small-sized, low-cost semiconductor device wherein the feeder substrate 2 for supplying power to the semiconductor elements 3 as a bare chip has the containers 2a for containing the semiconductor elements 3, the semiconductor elements 3 are bonded to the wiring layer 1b of the signal transmission substrate 1 for transmitting signals to the semiconductor elements 3 and contained in the containers 2a, the containers 2a are covered with the signal transmission substrate 1, and the signal transmission substrate 1 is superposed upon and bonded to the feeder substrate 2.

Semiconductor device, production method therefor, method for testing

Flux for soldering comprising inorganic ion-exchanger and activator containing halogen atom, solder composition the flux and solder particles, soldering method comprising coating the solder composition on a portion for soldering, soldering method comprising coating flux containing activator on a portion for soldering, applying inorganic ion-exchanger to the portion and applying solder to the portion, and soldering method comprising mixing inorganic ion-exchanger with creamy solder to give mixture, coating the mixture on a circuit pattern of a wiring plate and heating the wiring plate. The flux for soldering and the soldering composition are excellent in metal ion-migration resistance, corrosion resistance, soldering property and storage stability, and can be preferably used without cleaning and the soldering methods can be preferably used in practical no-clean soldering methods.

Flux for soldering and solder composition comprising the same and

An electronic device comprises a housing made of a polycarbonate resin, and a novel double-sided printed circuit board. The printed circuit board has one side embedded in the housing, and the other side exposed to the interior of the housing. A plurality of refractory electronic components are mounted onto one side of the printed circuit board and include a resistor and a capacitor. A plurality of lower refractory electronic components are mounted onto the other side of the housing and include a semiconductor integrated circuit, and a transformer. Preferably, an insulating layer is applied to cover the one side of the printed circuit board and the refractory electronic components. Also, a metal layer is applied to cover the insulating layer and the inner surface of the housing.

Electronic device and its production method

Method of manufacturing electronic device

A local plating apparatus includes a fiber, a laser beam penetrating nozzle or a laser beam penetrating mask through which a laser beam can be directly irradiated on a portion to be plated when plating is conducted on the portion to be plated using a jet of plating solution. The apparatus enables a laser beam to reach the portion to be plated in a stable state, and ensures a high plating speed and uniform plating quality.

Local laser plating apparatus

A method for transferring patterns on a silicone ladder type resin, which comprises: applying onto a substrate a silicone ladder type resin to be represented by the following general formula (I) ##STR1## (where: R.sub.1 denotes a phenyl group or a lower alkyl group, and two R.sub.1 's may be the same or different kinds; R.sub.2 denotes hydrogen atom or a lower alkyl group, and four R.sub.2 's may be the same or different kinds; and n represents an integer of from 5 to 1,000); drying the thus applied resin layer; thereafter applying onto the resin layer a cresol novolac type positive photo-resist; forming a predetermined pattern in the photo-resist layer; subjecting the photo-resist layer to pretreatment; and finally etching the silicone ladder type resin. An etching liquid for etching a silicone ladder type resin, which comprises an aromatic type solvent.

Method for transferring patterns on silicone ladder type resin and

High purity phenyl silicone ladder polymer, and a method for producing such polymer, suitable for use as the protective film, the interlayer insulating film, etc. in the fabrication of semiconductor elements, which polymer contains therein 1 ppm or below of each of sodium, potassium, iron, copper, lead and chlorine, and 1 ppb or below of each of uranium and thorium, and which is represented by the following general formula (I): ##STR1## (where: R.sub.1 to R.sub.4 denote respectively hydrogen or a lower alkyl group; n is an integer of from 8 to 1,000); or the following general formula (II): ##STR2## (where: n is an integer of from 8 to 1,600).

High purity phenyl silicone ladder polymer and method for producing the

A material for forming a high purity thin film which includes a silicone ladder polymer dissolved in an organic solvent is applied to a substrate to form a thin film thereon. The thin film is then heated, thereby removing the solvent and simultaneously curing the thin film. Subsequently, the cured thin film is exposed to an oxygen plasma to form a high purity SiO.sub.2 thin film on the substrate. Although the method consists of simple processes and employs low treatment temperatures, it is capable of forming a high purity SiO.sub.2 thin film which exhibits excellent step coverage and high dielectric breakdown strength.

Method of forming high purity SiO.sub.2 thin film

A stress relaxation protective layer made of a silicone material is formed on a coating covering a circuit disposed on a substrate of a semiconductor device, and a predetermined depth of the surface of the stress relaxation protective layer is modified. A resist is formed on the thus-modified surface of the stress relaxation protective layer, and the thus-formed resist is patterned so that the resist in a predetermined region is removed. The stress relaxation protective layer in the region from which the above-described resist has been removed is removed by etching, and the remaining resist is removed. Next, the coating layer in the region from which the stress relaxation protective layer has been removed is removed by etching with the remaining stress relaxation protective layer used as a mask so that the circuit is exposed. The manufacturing process for semiconductor devices can be significantly simplified since the resist patterning needs to be performed only once and the resist removal can be performed by a dry treatment.

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Amagasaki, Japan

Osamu Hayashi