Micron Technology Incorporated

Osamu Fujita

Katsumi Koge

Naoyoshi Kobayashi

A semiconductor device comprises laterally-neighboring word lines having respective word line caps thereon, an active region between the laterally-neighboring word lines and word line caps, an insulating material and a semiconductive material adjacent the word line caps, and a digit line contact between opposing substantially vertical surfaces of the semiconductive material, between opposing substantially vertical surfaces of the insulating material, adjacent to substantially horizontal surfaces of the word line caps, and between opposing substantially vertical surfaces of the word line caps. A transition surface extending between and connecting the substantially horizontal surface and the substantially vertical surface of the respective word line caps projects toward a longitudinal axis extending centrally through the digit line contact. Methods of forming the semiconductor device are also disclosed, as are electronic systems including the semiconductor device.

Growing community of inventors

Hiroshima, Japan

Osamu Fujita