Sony Semiconductor Solutions Corporation

Sony Corporation

Sony Group Corporation

Osamu Enoki

Yuta Hasegawa

Yuki Negishi

Hideaki Mogi

Masaki Murata

Tetsuji Yamaguchi

Masakazu Yajima

Ichiro Takemura

Nobuyuki Matsuzawa

Toru Udaka

Yoshiaki Obana

Rui Morimoto

Yosuke Saito

Iwao Yagi

Shintarou Hirata

Masashi Bando

Yohei Hirose

Yasuharu Ujiie

Norikazu Nakayama

Takuya Ito

Sae Miyaji

Hiroto Sasaki

Masato Kanno

Ayumi Nihei

Ryoji Arai

Yoshiyuki Hirano

Miki Sudou

Masayoshi Aonuma

Masanori Oka

Masami Senoh

A photoelectric conversion elementA according to an embodiment of the present disclosure includes: a first electrode; a second electrodethat is disposed to be opposed to the first electrode; and a photoelectric conversion layerthat is provided between the first electrodeand the second electrode. The photoelectric conversion layerincludes a hole transporting material as a first organic semiconductor material. The hole transporting material absorbs blue light.

Photoelectric conversion element and imaging device

There is provided a photoelectric conversion film including a quinacridone derivative represented by the following General formula and a subphthalocyanine derivative represented by the following General formula.

Photoelectric conversion film, photoelectric conversion element and electronic device

A first solid-state imaging element according to an embodiment of the present disclosure includes a bottom-electrode; a top-electrode opposed to the bottom-electrode; a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including a first organic semiconductor material; and—an upper inter-layer provided between the top-electrode and the photoelectric conversion layer, and including a second organic semiconductor material having a halogen atom in a molecule at a concentration in a range from 0 volume % or more to less than 0.05 volume %.

Solid-state imaging element and solid-state imaging apparatus

A first photoelectric conversion element according to an embodiment of the present disclosure incudes: a first electrode; a second electrode disposed to be opposed to the first electrode; and a photoelectric conversion layer provided between the first electrode and the second electrode and including a chromophore, fullerene or a fullerene derivative, and a hole-transporting material, in which the chromophore and the fullerene or the fullerene derivative are bonded to each other at least partially via a crosslinking group in the photoelectric conversion layer.

Photoelectric conversion element and method of manufacturing photoelectric conversion element

A first solid-state imaging element according to an embodiment of the present disclosure includes a bottom-electrode; a top-electrode opposed to the bottom-electrode; a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including a first organic semiconductor material; and an upper inter-layer provided between the top-electrode and the photoelectric conversion layer, and including a second organic semiconductor material having a halogen atom in a molecule at a concentration in a range from 0 volume % or more to less than 0.05 volume %.

A photoelectric conversion element of the present disclosure includes a first electrode, a second electrode disposed to be opposed to the first electrode, and an organic photoelectric conversion layer provided between the first electrode and the second electrode and including at least one of a Chryseno[1,2-b:8,7-b']dithiophene (ChDT1) derivative represented by the general formula (1) or a Chryseno[1,2-b:7,8-b&#x2032;]dithiophene (ChDT2) derivative represented by the general formula (2).

Photoelectric conversion element and solid-state imaging device

A photoelectric conversion element according to the disclosure includes: a first electrode and a second electrode that are disposed to face each other; and a photoelectric conversion layer that is provided between the first electrode and the second electrode, and contains at least one kind of polycyclic aromatic compound represented by any one of the following general formula (1), the following general formula (2), and the following general formula (3): 

A photoelectric conversion element uses organic materials and is provided with improved quantum efficiency and response rate. The organic photoelectric conversion element includes, in a photoelectric conversion layer, p-type molecules represented by Formula (1): in which A represents any one of oxygen, sulfur or selenium, any one of Rto Rrepresents a substituted or unsubstituted aryl or heteroaryl having 4 to 30 carbon atoms, the remainder of Rto Reach represent hydrogen, any one of Rto Rrepresents a substituted or unsubstituted aryl or heteroaryl having 4 to 30 carbon atoms, and the remainder of Rto Reach represent hydrogen.

Organic photoelectric conversion element

[Object] To provide a photoelectric conversion film, a solid-state image sensor, and an electronic device which have an increased imaging characteristic. [Solution] Provided is a photoelectric conversion film including: 

Photoelectric conversion film, solid-state image sensor, and electronic device

An organic photoelectric conversion element, an imaging device, and an optical sensor, which can detect a plurality of wavelength regions by a single element structure, are provided. The photoelectric conversion element is formed by providing an organic photoelectric conversion portion including two or more types of organic semiconductor materials having different spectral sensitivities between the first and the second electrodes. Wavelength sensitivity characteristics of the photoelectric conversion element change according to a voltage (bias voltage) applied between the first and the second electrodes. The photoelectric conversion element is mounted in the imaging device and the optical sensor.

Photoelectric conversion element, imaging device, and optical sensor

A first solid-state imaging element according to an embodiment of the present disclosure includes a bottom-electrode; a top-electrode opposed to the bottom-electrode; a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including a first organic semiconductor material; and an&#x2014;upper inter-layer provided between the top-electrode and the photoelectric conversion layer, and including a second organic semiconductor material having a halogen atom in a molecule at a concentration in a range from 0 volume % or more to less than 0.05 volume %.

There is provided a photoelectric conversion film including a quinacridone derivative represented by the following General formula (1) and a subphthalocyanine derivative represented by the following General formula (2). 

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Kanagawa, Japan

Osamu Enoki