Hitachi, Ltd.

Hitachi Chemical Company, Ltd.

Babcock-hitachi Kabushiki Kaisha

Osamu Asai

Masanobu Hanazono

Katsumi Suzuki

Moriaki Fuyama

Hideo Suzuki

Hideaki Kawakami

Tatsuo Horiba

Satoru Ogihara

Kunihiro Maeda

Masahiro Okamura

Kunio Miyazaki

Masateru Suwa

Masahiro Koizumi

Jin Onuki

Toshiki Kahara

Ryo Hiraga

Kohki Tamura

Kishiro Iwasaki

Katsumi Tamura

Yukio Takeda

Satoshi Kokura

Katsuhisa Usami

Yoshihiro Suzuki

Hideyuki Yagi

Noboru Ebato

Kunio Ono

Toshio Kawakami

Michio Oue

Masao Iimura

Tadashi Minakawa

A corrosion-resistant aluminum electronic material comprising an alloy containing aluminum as the principal component and, in addition, a small amount of a noble metal, the content of said noble metal being equal to or less than that at the eutectic point having the primary crystal of aluminum. As the noble metal, there is contained at least one metal selected from Pt, Pd, Rh, Ir, Os, Ru, Au and Ag. Said electronic material is used for ball-bonding wire and distributing film in a semiconductor device, and the like.

Corrosion-resistant aluminum electronic material

A metallized layer formed on a SiC sintered body essentially consists of a metal conductor such as Cu or Au as its principal component and a binder such as phosphorous alloy, the oxide of which forms a vitreous material together with a silicon oxide formed previously on the surface of the SiC sintered body, the metallized layer is bonded to the SiC sintered body through a fused vitreous layer of a composite oxide formed during sintering of the metallized layer in an oxidizing atmosphere, the fused vitreous layer of the composite oxide essentially consists of the silicon oxide and the oxides of the binder. The metallized layer exhibits an improved wettability to solders.

SiC sintered body having metallized layer and production method thereof

A sintered silicon carbide body having a high thermal conductivity and a high electrical insulation without any drop substantially throughout the sintered body is produced from a powdery silicon carbide composition comprising at least 90% by weight of silicon carbide powders having an average particle size of not more than 10 .mu.m and 0.01 to 4% by weight of powders of beryllium or its compound having a particle size of not more than 30 .mu.m in terms of beryllium atom, a nitrogen content of the composition being not more than 500 ppm.

Powdery silicon carbide composition for sintering

A primary battery comprises a negative active material such as lithium, a positive active material and a non-aqueous electrolyte, wherein the positive active material further comprises a main positive active material such as manganese dioxide which takes main part in a primary discharge reaction together with the negative active material through the non-aqueous electrolyte and a precursor such as vanadium pentoxide or lead dioxide which takes part in the primary discharge reaction and produces a sub-positive active material, which takes part in a secondary discharge reaction.

Primary battery

An electroplating method using an aqueous solution containing thiocyanic ions in an amount of 0.5 to 10 moles/l, silver ions in an amount of 0.04 to 0.8 mole/l and a film improving agent in an amount effective to suppress a local growth of a silver film on a metallic substrate to be plated, which comprises subjecting, prior to the electroplating, the metallic substrate to a preplating step under a current density of 0.1 to 80 mA/dm.sup.2 in an aqueous solution containing silver ions in an amount of 0.001 to 0.02 mole/l and thiocyanic ions in an amount of 0.1 to 5 moles/l whereby the adhesiveness of the resulting electroplated silver film to the substrate is improved.

Silver-electroplating method using thiocyanic solution

A liquid crystal display cell being capable of display with liquid crystal molecules aligned towards a predetermined direction has its display characteristics made greatly dependent on the properties of an alignment film coming into contact with the molecules of the liquid crystal. A louver having a predetermined angle is disposed between the substrate on which the alignment film is to be formed and an evaporation material source to pass a material evaporated from the evaporation material for deposition onto the substrate. The thus formed film exhibits a very great orientation controlling power of biaxial anisotropy. This forming method of the alignment film also allows the easy formation of the alignment film on a large substrate.

Method of forming alignment film for liquid crystal display cell

A narrow track width magnetic head can be formed using an integrated circuit formation techniques such as evaporation plating, chemical etching, etc. But, there has been such a problem that it is difficult to provide a center tap in a conventional thin film magnetic head structure including coils of four or more turns. A magnetic head according to the present invention comprising a coil divided into two sections by the center tap, the electrostatic capacitance of each section being substantially the same. The coil may be formed into a precise pattern with ease by photoetching technique. A plurality of sets of conductive films insulated from one another are provided crossing a magnetic core, each set consisting of two conductive films of the same pattern. The alternating layers of the conductive films are connected on the backward of a magnetic gap to provide the two sections of the coil. A center tap is derived from a connection portion of the two sections of the coil and a coil terminal is provided at each of the opposite free ends of the coil. Thus, the thin film magnetic head having a multi-turn coil with a center tap is provided.

Thin film magnetic head with a center tap

A method of forming thin films wherein a film is formed through glow discharge such as ion plating or sputtering by using a mask whose surface in contact with the surface of the substrate on which the film is formed is provided with a thermostable elastic member, whereby the film, for use in multi-layer metallization, can be formed with high dimensional precision and intimacy.

Method of forming deposition films for use in multi-layer metallization

A thin film integrated circuit consists of a first conductor of aluminum extended in any desired direction on an insulating substrate, an anodized film formed by anodization in a chromic acid solution at positions other than cross-connectional parts on the first conductor, a second conductor cross-connected on the first conductor, and an anodized film formed by anodization in a chromic acid solution on the surface of the second conductor. The thin film integrated circuit is prepared by partially forming an anodized film in a sulfuric acid or oxalic acid solution at cross-connectional parts of a first conductor of aluminum so as not to form any anodized film in a chromic acid solution at the cross-sectional parts of the first conductor of the circuit, masking the partially formed anodized film with a photoresist film, then forming an anodized film by a chromic acid solution, and then removing the photoresist film and the anodized film. After the cross-sectional parts of the first conductor are exposed thereby, a second conductor is formed. For an etching solution for anodized film, which is anodized using the sulfuric acid or oxalic acid solution, a mixed solution consisting of 60 to 40 g/l of chromic acid and 40 to 300 g/l of oxidative acid is used.

Method for preparing thin film integrated circuit

A boiler tube and a method for manufacturing the same are disclosed in which an inner surface of the boiler tube used in the center of a high-temperature, high-pressure boiler is formed with a spinel layer consisting of an oxide of iron, chromium and nickel, which is exposed. The specific method of the manufacture is that after the boiler tube is brought into contact with high temperature steam, a magnetic iron (Fe.sub.3 O.sub.4) layer produced on the inner surface is removed.

Method of manufacturing a stainless steel boiler tube with anticorrosive

By forming a metallic coating on a sufficiently cleaned semiconductor substrate through ion plating, a low power loss and high switching speed semiconductor device is obtained which differs from an ordinary semiconductor device with a diffused junction. In an interface between the metallic coating and the semiconductor substrate, a considerably thin metal-injected layer is formed toward the semiconductor substrate. Schottky barrier devices may be formed by the method of the invention.

Method of manufacturing low power loss semiconductor device

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Hitachi, Japan

Osamu Asai