Semiconductor Energy Laboratory Co., Ltd.

Osamu Aoyagi

Shunpei Yamazaki

Toshimitsu Konuma

Toshio Watanabe

Masahiko Sato

Hiroyuki Sakayori

Ippei Kobayashi

Toshiharu Yamaguchi

Akio Osabe

Kaoru Tabata

Chizuru Isigaki

Seiichi Odaka

Kenji Itoh

Toru Takayama

Akira Mase

Masakazu Odaka

Chizuru Ishigaki

An improved liquid crystal device and manufacturing method for same are described. In the device, a pair of substrates, between which a liquid crystal layer is disposed, is joined with pillars inbetween functioning as spacers which are provided of photocurable resin by photolithography. With this structure, the spacers can be in surface contact with the inside surfaces of the substrates on which electrode arrangement and active devices are formed.

Liquid crystal device and method for manufacturing same with spacers formed by photolithography

An improved liquid crystal device and manufacturing method for same are described. In the device, a pair of substrates, between which a liquid crystal layer is disposed, is joined with pillars inbetween functioning as spacers which are provided of photocurable resin by photolithography. With this stucture, the spacers can be in surface contact with the inside surfaces of the substrates on which electrode arrangement and active devices are formed.

Liquid crystal device having sealant and spacers made from the same

Liquid crystal device and method for manufacturing same with spacers

An improved liquid crystal device and manufacturing method for same are described. In the device, a pair of substrates, between which a liquid crystal layer is disposed, is joined with pillars inbetween functioning as spacers which are provided of photocurable resin by photolithography. With this structure, the spacers can be in surface contact with the inside surfaces of :he substrates on which electrode arrangement and active devices are formed.

Cleaning a device to make a film made from carbon or containing carbon as a main ingredient is carried out by etching the interior of a deposition chamber where the film is formed, with an etching gas in a plasma state selected from the group of hydrogen, oxygen, and a gaseous fluoride, and then cleaning the interior of the deposition chamber with a cleaning gas selected from the group of argon and hydrogen in a plasma state.

Method for forming carbonaceous films

It is proposed to widen the application of wet etching by making use of excellent masks. In advance of actually etching of the surface to be etched, the surface is coated with a patterned carbon coating as a mask by CVD. The carbon coating has a high degree of hardness comparable to that of diamond and has an excellent resistance to the attack of chemicals.

Method of wet etching by use of carbonaceous masks

A substrate having a film to be etched is coated with a carbon film. The carbon film is then coated with an organic mask. The mask is then patterned to expose portions of the carbon film. Plasma etching is then utilized to remove portions of the carbon film not covered by the mask, followed by wet etching to form a predetermined pattern in the film on the substrate.

Method of wet etching by use of plasma etched carbonaceous masks

Method for manufacturing liquid crystal device with spacers formed by

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Atsugi, Japan

Osamu Aoyagi