Hitachi, Ltd.

Osam Kanehisa

Masatoshi Shiiki

Masahito Migita

Hajime Yamamoto

Tsuyoshi Uda

A semiconductor optical apparatus of the invention has a quantum well super-lattice structure essentially of only direct transition semiconductor or comprising a direct transition semiconductor and an indirect transiton semiconductor. In the semiconductor optical apparatus of the invention, by using an absorption saturation phenomenon of excitions in the direct transition semiconductor constructing the quantum well super-lattice structure, a non-volatile information recording apparatus which can record, reproduce, and erase information at a high speed even at the room temperature or even by irradiating a light of a low intensity is realized.

Semiconductor optical apparatus

A multi-color single layer electroluminescent display apparatus comprising a illuminant layer having been interposed between a pair of electrode layers and having a plurality of activators doped at spatially different locations is disclosed. A process for producing an electroluminescent display apparatus comprising doping with a plurality of activators at spatially different locations on forming a illuminant layer is also disclosed.

Growing community of inventors

Kodaira, Japan

Osam Kanehisa