Uchicago Argonne, LLC

University of Chicago

Other

North Carolina State University

Arch Development Corporation

Mcnc

Orlando H Auciello

Dieter M Gruen

Alan R Krauss

John Arthur Carlisle

Anirudha V Sumant

Derrick C Mancini

Michael J Pellin

Gary Elder McGuire

Charles L Goldsmith

Robert W Carpick

Suresh Sampath

James Birrell

Chris Gudeman

James Hwang

Angus Ian Kingon

Ming Ding

Leonidas E Ocola

Millicent A Firestone

Hao Li

Rovindra Dat

Jennifer Gerbi

Pablo Gurman

Alejandro Berra

Xingcheng Xiao

Eva-Maria Meyer

Hans-Gerd Busmann

Dan J Lichtenwalner

Ken D Gifford

John A Carlilse

Husam N Al-Shareef

An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline (UNCD) films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation. Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.

Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches

The present invention provides for an electrostatic microelectromechanical (MEMS) device comprising a dielectric layer separating a first conductor and a second conductor. The first conductor is moveable towards the second conductor, when a voltage is applied to the MEMS device. The dielectric layer recovers from dielectric charging failure almost immediately upon removal of the voltage from the MEMS device.

Electrostatic MEMS devices with high reliability

The invention provides a method for producing bioinert biocompatible diamond particles/polymer composites or any other matrix (e.g. glass, metal, plastic, ceramic and more)/diamond particle composites, even if not biocompatible with outstanding mechanical, tribological, and biological properties, the method comprising selecting a polymer having a melting temperature below about 300 C; mixing diamond particles with the polymer to form a liquid mixture, poring the liquid diamond particle/polymer or any other diamond particle/matrix composite in liquid form into a mold and then causing the composite to sinter with the diamond particles densely and uniformly distributed through the bulk and surface of the composite, such that the diamond particles distributed on the surface can form a diamond layer covering the surface.

Method for making particle/polymer composites and applications

A reliable long life RF-MEMS capacitive switch is provided with a dielectric layer comprising a 'fast discharge diamond dielectric layer' and enabling rapid switch recovery, dielectric layer charging and discharging that is efficient and effective to enable RF-MEMS switch operation to greater than or equal to 100 billion cycles.

RF-MEMS capacitive switches with high reliability

A process for fabricating a piezoactuated storage device having a tip array and a memory media, which includes but is not limited to: etching the regions on the surface of the silicon wafer to produce substantially pyramidal etch pits by anisotropic etching or chemical etching with potassium hydroxide (KOH); growing an oxide layer on a top surface of the silicon wafer and in the substantially pyramidal etch pits to produce oxidation sharpening of the substantially pyramidal etch pits; forming an array of conductive tips of a nanocarbon film of nanostructured carbon material by deposition, wherein the nanostructured carbon material is ultrananocrystalline diamond (UNCD), ta-C, or diamond-like carbon films; and forming an oxygen diffusion barrier layer by deposition of a TiAl, TaAl, or any other oxygen diffusion barrier layer material on the nanocarbon film.

Process for fabricating piezoelectrically actuated ultrananocrystalline diamond tip array integrated with ferroelectric or phase change media for high-density memory

A user-friendly multi-layer micro/nanofluidic flow device and micro/nano fabrication process are provided for numerous uses. The multi-layer micro/nanofluidic flow device can comprise: a substrate, such as indium tin oxide coated glass (ITO glass); a conductive layer of ferroelectric material, preferably comprising a PZT layer of lead zirconate titanate (PZT) positioned on the substrate; electrodes connected to the conductive layer; a nanofluidics layer positioned on the conductive layer and defining nanochannels; a microfluidics layer positioned upon the nanofluidics layer and defining microchannels; and biomolecular nanovalves providing bio-nanovalves which are moveable from a closed position to an open position to control fluid flow at a nanoscale.

Multi-layer micro/nanofluid devices with bio-nanovalves

A device including a layered heterostructure with an oxygen-containing material, with a carbon layer and an amorphous oxygen diffusion barrier protecting the carbon layer from etching by oxygen. One or more of a metal, a carbide or an oxide may be in contact with the amorphous oxygen diffusion barrier that has the lowest free energy of oxide formation in the device. Various devices are disclosed as are varieties of carbon allotropes. Methods of protecting carbon, such as diamond from the oxygen etching in processes such as device manufacture are also disclosed.

Integration of dissimilar materials for advanced multifunctional devices

A layered device including a substrate; an adhering layer thereon. An electrical conducting layer such as copper is deposited on the adhering layer and then a barrier layer of an amorphous oxide of TiAl followed by a high dielectric layer are deposited to form one or more of an electrical device such as a capacitor or a transistor or MEMS and/or a magnetic device.

Layered CU-based electrode for high-dielectric constant oxide thin film-based devices

A compact large density memory piezoactuated storage device and process for its fabrication provides an integrated microelectromechanical (MEMS) and/or nanoelectromechanical (NEMS) system and structure that features an integrated large density array of nanotips made of wear-resistant conductive ultrananocrystalline diamond (UNCD) in which the tips are actuated via a piezoelectric thin film integrated with the UNCD tips. The tips of the special piezoactuated storage device effectively contact an underlying metal layer (top electrode) deposited on a polarizable ferroelectric layer that is grown on top of another metal layer (bottom electrode) to form a ferroelectric capacitor. Information is imprinted in the ferroelectric layer by the polarization induced by the application of a voltage pulse between the top and bottom electrodes through the conductive UNCD tips. This integrated microelectromechanical (MEMS) and/or nanoelectromechanical (NEMS) system and structure can be efficiently used to imprint data in the ferroelectric layer for memory storage with high density in the gigabit (Gb) to terabit (Tb) range. An alternative memory media to the ferroelectric layer can be a phase change material that exhibits two orders of magnitude difference in electrical resistance between amorphous and crystalline phases.

Piezoelectrically actuated ultrananocrystalline diamond tip array integrated with ferroelectric or phase change media for high-density memory

A method of depositing nanocrystalline diamond film on a substrate at a rate of not less than about 0.2 microns/hour at a substrate temperature less than about 500&#xb0; C. The method includes seeding the substrate surface with nanocrystalline diamond powder to an areal density of not less than about 10sites/cm, and contacting the seeded substrate surface with a gas of about 99% by volume of an inert gas other than helium and about 1% by volume of methane or hydrogen and one or more of acetylene, fullerene and anthracene in the presence of a microwave induced plasma while maintaining the substrate temperature less than about 500&#xb0; C. to deposit nanocrystalline diamond on the seeded substrate surface at a rate not less than about 0.2 microns/hour. Coatings of nanocrystalline diamond with average particle diameters of less than about 20 nanometers can be deposited with thermal budgets of 500&#xb0; C.-4 hours or less onto a variety of substrates such as MEMS devices.

Method to grow pure nanocrystalline diamond films at low temperatures and high deposition rates

An ultrananocrystalline diamond (UNCD) having an average grain size between 3 and 5 nanometers (nm) with not more than about 8% by volume diamond having an average grain size larger than 10 nm. A method of manufacturing UNCD film is also disclosed in which a vapor of acetylene and hydrogen in an inert gas other than He wherein the volume ratio of acetylene to hydrogen is greater than 0.35 and less than 0.85, with the balance being an inert gas, is subjected to a suitable amount of energy to fragment at least some of the acetylene to form a UNCD film having an average grain size of 3 to 5 nm with not more than about 8% by volume diamond having an average grain size larger than 10 nm.

Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries

MEMS structure and a method of fabricating them from ultrananocrystalline diamond films having average grain sizes of less than about 10 nm and feature resolution of less than about one micron . The MEMS structures are made by contacting carbon dimer species with an oxide substrate forming a carbide layer on the surface onto which ultrananocrystalline diamond having average grain sizes of less than about 10 nm is deposited. Thereafter, microfabrication process are used to form a structure of predetermined shape having a feature resolution of less than about one micron.

Patterning of nanocrystalline diamond films for diamond microstructures useful in MEMS and other devices

An electrically conducting n-type ultrananocrystalline diamond (UNCD) having no less than 10 atoms/cm of nitrogen is disclosed. A method of making the n-doped UNCD. A method for predictably controlling the conductivity is also disclosed.

N-type droping of nanocrystalline diamond films with nitrogen and electrodes made therefrom

An ultrananocrystalline diamond (UNCD) element formed in a cantilever configuration is used in a highly sensitive, ultra-small sensor for measuring acceleration, shock, vibration and static pressure over a wide dynamic range. The cantilever UNCD element may be used in combination with a single anode, with measurements made either optically or by capacitance. In another embodiment, the cantilever UNCD element is disposed between two anodes, with DC voltages applied to the two anodes. With a small AC modulated voltage applied to the UNCD cantilever element and because of the symmetry of the applied voltage and the anode-cathode gap distance in the Fowler-Nordheim equation, any change in the anode voltage ratio V /V required to maintain a specified current ratio precisely matches any displacement of the UNCD cantilever element from equilibrium. By measuring changes in the anode voltage ratio required to maintain a specified current ratio, the deflection of the UNCD cantilever can be precisely determined. By appropriately modulating the voltages applied between the UNCD cantilever and the two anodes, or limit electrodes, precise independent measurements of pressure, uniaxial acceleration, vibration and shock can be made. This invention also contemplates a method for fabricating the cantilever UNCD structure for the sensor.

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Bolingbrook, IL, United States of America

Orlando H Auciello