Nec Corporation

Renesas Electronics Corporation

Orie Tsuzuki

Noriaki Matsuno

Tadashi Maeda

Tomoyuki Yamase

Tomonobu Kurihara

Yuu Yamaguchi

Yoshinori Horiguchi

Isao Sakakida

An information storage device includes a storage that stores transfer data from an information processing device, the information storage device being removably connected to the information processing device, a switch unit that switches a data transfer mode of the information processing device in accordance with manipulation by a user, and a controller that controls the information processing device to transfer data in a mode in which data temporarily stored in a data storing area is transferred to the storage or in a mode in which data is transferred to the storage without being temporarily stored in the data storing area in accordance with the selection of the data transfer mode by the switch unit.

Information storage device, information processing system, and setting method of data transfer mode of information processing device

A signal processing device includes a detecting part that detects intensity of an input signal, a timer part that includes a time constant circuit and measures time based on a time constant of the time constant circuit, and a determination circuit that counts the number of times of switching of the input signal detected by the detecting part within the time measured by the time constant circuit.

Signal processing device

A method of forming a semiconductor device, wherein, a silicon oxide film formed on a P-type silicon substrate is patterned, after which element separating trenches with a wider aperture width and a buried layer drawing trench with a narrower aperture width are formed at the same time. The buried layer drawing trench is filled with a conductive film such as a tungsten film, which also forms concave parts at the element separating trenches. The semiconductor is exposed at the bottom parts of the element separating trenches to be etched and form complete element separating trenches penetrating through the buried layer.

Method of manufacturing semiconductor device requiring less manufacturing stages

Growing community of inventors

Kawasaki, Japan

Orie Tsuzuki