Taiwan Semiconductor Manufacturing Comp. Ltd.

Oreste Madia

Gerben Doornbos

Georgios Vellianitis

Marcus Johannes Henricus Van Dal

A field effect transistor may include an active layer containing an oxide compound material of at least two atomic elements including a first element of tin and a second element selected from Ge, Si, P, S, F, Ti, Cs, and Na and located over a substrate. The field effect transistor may further include a gate dielectric located on the active layer, a gate electrode located on the gate dielectric, and a source contact structure and a drain contact structure contacting a respective portion of the active layer. The oxide compound material may include at least germanium and tin. The oxide compound semiconductor material may be used as a p-type semiconductor material in BEOL structures.

Germanium tin oxide-containing semiconductor device and methods for forming the same

A method of forming a semiconductor device may include depositing a NiAl layer on a substrate, oxidizing the NiAl layer to form a bilayer including a NiO semiconducting material layer and an AlOlayer on the NiO semiconducting material layer, forming a semiconductor layer including the NiO semiconducting material layer, the semiconductor layer also including a channel region, and forming a gate dielectric on the channel region of the semiconductor layer.

Ni(Al)O p-type semiconductor via selective oxidation of NiAl and methods of forming the same

A semiconductor device is provided. The semiconductor device includes a gate layer, a semiconductor layer and a ferroelectric layer disposed between the gate layer and the semiconductor layer. The semiconductor layer includes a first material containing a Group III element, a rare-earth element and a Group VI element, the ferroelectric layer includes a second material containing a Group III element, a rare-earth element and a Group V element and the gate layer includes a third material containing a Group III element and a rare-earth element. A method of fabricating a semiconductor device is also provided.

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Hsinchu, Taiwan

Oreste Madia