Infineon Technologies LLC

International Business Machines Corporation

Cypress Semiconductor Corporation

Spansion Israel Ltd

Oren Shlomo

Yair Sofer

Dov Ramm

Avri Harush

Israel Berger

Kirill Dyagilev

Benjamin Sheinman

Yoram Betser

Amichai Givant

Eran Geyari

A resistor network with reduced area and/or improved voltage resolution and methods of designing and operating the same are provided. Generally, the resistor network includes a resistor ladder with a first number (n) of integrated resistors coupled in series between a top and a bottom contact, with one or more contacts coupled between adjacent resistors. A second number of integrated resistors is coupled in parallel between the top and bottom contacts, and a third number of integrated resistors is coupled in series between the second integrated resistors and either the top or the bottom contact. Each of the integrated resistors has a resistance of R, and a voltage developed across each resistor in the resistor ladder is equal to a voltage applied between the top and bottom contacts divided by n. Where the second number is n−1, and the third number is 1, the total number of resistors is 2n.

Integrated resistor network and method for fabricating the same

Memory devices and methods for operating the same are provided. Generally, the device includes an array of multibit-memory-cells, each operable to store multiple bits in separate locations of a charge-trapping layer, and control-circuitry coupled to the array. The control-circuitry is operable read 1st and 2nd bit values of each cell individually based on generated first and second sensed currents, where the first and second sensed currents correspond to charges trapped in first and second bit locations. The control-circuitry executes an algorithm based on the first and second sensed currents and determines a logic state of the cell. In one embodiment, the control-circuitry averages the sensed currents, and compares this to a reference current to determine the logic state. In another, the 2nd bit value is a complement of the 1st, and the control-circuitry compares the currents to determine the logic state without use of a reference current.

Multibit memory device and method of operating the same

A voltage-glitch detection and protection circuit and method are provided. Generally, circuit includes a voltage-glitch-detection-block (GDB) and a system-reset-block coupled to the GDB to generate a reset-signal to cause devices in a chip including the circuit to be reset when a voltage-glitch in a supply voltage (VDD) is detected. The GDB includes a voltage-glitch-detector coupled to a latch. The voltage-glitch-detector detects the voltage-glitch and generates a PULSE to the system-reset-block and latch. The latch receives the PULSE and generates a PULSE_LATCHED signal to the system-reset-block to ensure the reset-signal is generated no matter a width of the PULSE. In one embodiment, the latch includes a filter and a sample and hold circuit to power the latch, and ensure the PULSE_LATCHED signal is coupled to the system-reset-block when a voltage to the GDB or to the latch drops below a minimum voltage due to the voltage-glitch.

Voltage-glitch detection and protection circuit for secure memory devices

A DC-DC converter including voltage and slope regulation and a method of operating the same are provided. Generally, the converter includes a voltage source to supply an output, a switching-circuit coupled to the voltage sources to control a voltage on the output, and a slope-detector coupled to the switching-circuit and the output to detect a slope of a voltage transition between a first and a second voltage. When the detected slope exceeds a predetermined maximum the slope-detector sends a digital signal to the switching-circuit to intermittently pause the voltage transition to limit the slope to less than the maximum. In one embodiment, the voltage source is a charge-pump, and the switching-circuit includes a logic-gate coupled to the slope-detector to turn the charge-pump ON when the detected slope is less than the maximum, and to turn OFF the charge-pump for a time when the slope exceeds the maximum.

Dual regulation-loop ramp-controlled DC-DC converter

A differential-slope-limiting-switch and method are provided. Generally, the switch includes a first transistor having a first source-drain (SD) and well coupled to a first port of the switch, a gate, and a second SD, and a second transistor having a first SD and well coupled to a second port, a gate, and a second SD coupled to the second SD of the first transistor. A selector-circuit couples the gate of the first transistor to a first current-source when a signal to close the switch is received, and to the first port when it is not received. A second selector-circuit couples the gate of the second transistor to a second current-source when the signal is received, or to the second port. First and second feedback-capacitors couple each gate to the port on opposite sides of the switch and with the current-sources limit a slope of voltage transitions across the closed switch.

General-purpose analog switch with a controlled differential equalization voltage-slope limit

A system and method for protecting against a voltage glitch are provided. Generally, the system includes a reset-detector coupled to a supply voltage (VCC) and to a power-on-reset (POR) block, and a glitch-detector coupled to VCC and the reset-detector. The reset-detector is operable to provide a signal to the POR block to generate a global-reset-signal when VCC decreases below a minimum and remains low for at least a first time. The glitch-detector is operable to provide a glitch-signal to the reset-detector to cause it to provide the signal to the POR block when VCC decreases below the minimum and remains low for at least a second time, where the second time is less than the first. The reset-detector can further include a retention-circuit operable to recall a glitch-signal was received and signal the POR block when VCC is restored. Other embodiments are also disclosed.

Glitch protection system and reset scheme for secure memory devices

Systems, methods, and devices implement direct current (DC)-DC converters having fast wake up times and low ripple effects. Methods include determining a DC-DC converter is to be transitioned from an operational mode to a low power mode, and storing a voltage at an input of a comparator coupled to an input of a charge pump, the voltage being stored in a feedback capacitor of a feedback regulation loop. The methods further include uncoupling a voltage trimming circuit from the input of the comparator, and maintaining, at least in part, the stored voltage at the feedback capacitor during the low power mode.

Systems, methods, and devices for fast wakeup of DC-DC converters including feedback regulation loops

A method of reducing read disturb in NVM cells by using a first drain voltage to read the array cells and using a second, lower drain voltage, to read the reference cells. Drain voltages on global bitlines (GBLs) for both the array and the reference cells may be substantially the same as one another to maintain main path capacitance matching, while drain voltages on local bitlines (LBLs) for the reference cells may be lower than the drain voltage on local bitlines (LBLs) for the array cells to reduce second bit effect. Reducing the drain voltage of the reference cell at its drain port may be performed using a clamping device or a voltage drop device.

Minimizing read disturb in an array flash cell

A method for migrating an electronic circuit from a source technology to a target technology includes accepting a source circuit that operates in the source technology. The source circuit includes source components interconnected at nodes in accordance with a source topology. Source voltages at the nodes of the source circuit are determined, and the source voltages are transformed to produce respective target voltages suitable for the target technology. The source circuit is separated into sub-circuits, each sub-circuit including one or more of the source components. In each sub-circuit individually, the one or more of the source components are converted to one or more respective target components in the target technology responsively to the target voltages, so as to produce a respective migrated sub-circuit. The migrated sub-circuits are reconnected to produce a target circuit in the target technology, the target circuit having a target topology identical to the source topology.

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Haifa, Israel

Oren Shlomo