Intel Corporation

Or O Rotem

George Shchupak

Ari-Shaul Leibman

Bassel Daher

An embodiment of a novel memory circuit is described that improves post aging performance of a shared VCC node with a write pre-charge on the supply line. A write pre-charge PMOS device is added to the shared VCC node in some embodiments. The write pre-charge circuit helps insure that the shared VCC node has a healthy voltage value at the beginning of a write phase and also enables the memory circuit to recover the shared VCC value after the write phase (e.g., immediately following), enabling a read operation after a write operation for a same register file entry or adjacent entries (e.g., entries connected to the same shared VCC node). Other embodiments are disclosed and claimed.

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Haifa, Israel

Or O Rotem