Tokyo Electron Limited

Tokyo Electron Limi Ted

Omid Zandi

Jacques Faguet

Paul Abel

Ornella Sathoud

Mengistie Debasu

The present disclosure provides embodiments of processes and methods for stabilizing self-assembled monolayers (SAMs). In the present disclosure, a cyclic vapor deposition process is used to selectively deposit a polymer thin film on a SAM structure formed on a target material. The polymer thin film selectively deposited on the SAM structure stabilizes the SAM structure by: (a) healing defects in the SAM structure and providing blanket coverage over the target material surface, (b) preventing migration of SAM-forming molecules to neighboring non-target surfaces, and (c) increasing the thickness and rigidity of the SAM structure. In one embodiment, sequentially pulsed initiated chemical vapor deposition (spiCVD) is used to selectively deposit the polymer thin film on the SAM structure.

Methods for stabilization of self-assembled monolayers (SAMs) using sequentially pulsed initiated chemical vapor deposition (spiCVD)

The present disclosure provides new processes and methods to pre-treat metal surfaces in the back end of line (BEOL) fabrication of integrated circuits (ICs). More specifically, the present disclosure provides selective, self-limiting processes and methods for stripping native oxide surface layers that may form on exposed metal surfaces during processing of ICs. The processes and methods disclosed herein utilize the fundamental concepts of metal complexation to provide a novel solution, which enables native oxide surface layers to be selectively removed from exposed metal films in a self-limiting manner. In particular, the disclosed processes and methods use complexing agents (e.g., ligands) to selectively dissolve native oxide surface layers, without significantly etching or removing the underlying metal film.

Methods for selective removal of surface oxides on metal films

Processing system and platform embodiments are described that illuminate etch solutions to provide controlled etching of materials. The processing systems and platforms deposit a liquid etch solution over a material to be etched and illuminate the liquid etch solution to adjust levels of reactants. The liquid etch solution has a first level of reactants, and the illumination causes the liquid etch solution to have a second level of reactants that is different than the first level. The material is modified with the illuminated etch solution, and the modified material is removed. The delivery, exposing, and removing can be repeated to provide a cyclic etch. Further, oxidation and dissolution can occur simultaneously or can occur in multiple steps. The material being etched can be a polycrystalline material, a polycrystalline metal, and/or other material. One liquid etch solution can include hydrogen peroxide that is illuminated to form hydroxyl radicals.

Processing systems and platforms for roughness reduction of materials using illuminated etch solutions

The present disclosure provides embodiments of improved area-selective deposition (ASD) processes and methods for selectively depositing polymer films on a variety of different target material. More specifically, the present disclosure provides improved ASD processes and related methods that use a cyclic vapor deposition process, which sequentially exposes a surface of a substrate to a polymer precursor followed by an initiator to selectively deposit a polymer thin film on a target material exposed on the substrate surface. The process of sequentially exposing the substrate surface to the precursor and the initiator can be repeated for one or more cycles of the cyclic vapor deposition process until a predetermined thickness of the polymer thin film is selectively deposited on the target material. In one embodiment, sequentially pulsed initiated chemical vapor deposition (spiCVD) is used to selectively deposit the polymer thin film on the target material.

Methods for area-selective deposition of polymer films using sequentially pulsed initiated chemical vapor deposition (spiCVD)

Methods are disclosed that illuminate etch solutions to provide controlled etching of materials. An etch solution (e.g., gaseous, liquid, or combination thereof) with a first level of reactants is applied to the surface of a material to be etched. The etch solution is illuminated to cause the etch solution to have a second level of reactants that is greater than the first level. The surface of the material is modified (e.g., oxidized) with the illuminated etch solution, and the modified layer of material is removed. The exposing and removing can be repeated or cycled to etch the material. Further, for oxidation/dissolution embodiments the oxidation and dissolution can occur simultaneously, and the oxidation rate can be greater than the dissolution rate. The material can be a polycrystalline material, a polycrystalline metal, and/or other material. One etch solution can include hydrogen peroxide that is illuminated to form hydroxyl radicals.

Roughness reduction methods for materials using illuminated etch solutions

A method and a system for etching of semiconductor substrates, and particularly, wet etching of wafers. The etch rate of liquid solutions applied on the wafer is adjusted by irradiating the liquid solutions with spatially varied light intensity. Photo-reactive agents are added to the liquid solutions, the agents including photo acids, photo bases and photo-oxidizers. Illumination of the photo-reactive agents causes increase/decrease of the pH value and oxidation potential value of the liquid solutions.

Photonically tuned etchant reactivity for wet etching

Methods and systems herein enable selective removal of ruthenium (Ru) metal at high throughput, and without potentially damaging effects of plasma. Techniques include a photo-assisted chemical vapor etch (PCVE) method to selectively remove Ru metal as a volatile species. A substrate with ruthenium surfaces is positioned within a processing chamber. A photo-oxidizer is received in vapor form in the processing chamber. The photo-oxidizer is a species that generates reactive oxygen species in response to actinic radiation. Reactive oxygen species are then generated by irradiation of the photo-oxidizer, such as with ultraviolet radiation. The reactive oxygen species react with ruthenium surfaces causing the ruthenium surfaces to become oxidized. Oxidized ruthenium is then removed from the substrate, such as be vaporization.

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Austin, TX, United States of America

Omid Zandi