University of California

Omeed Momeni

Payam Heydari

Hao Wang

Hossein Jalili

Hamidreza Afzal

Rouzbeh Kananizadeh

Razieh Abedi

Joshua Hihath

Mohamadali Malakoutian

Davide Donadio

Hadi Bameri

Mohammad-Hadi Sohrabi

Liu Xiaoguang

The disclosed embodiments relate to the design of a new type of transistor called a 'field-effect bipolar transistor' (FEBT). This FEBT includes a substrate, which comprises a body of the FEBT. It also includes a source comprising an N+ doped region of the substrate, and a drain comprising a P+ doped region of the substrate. The FEBT also includes one or more gates composed of a dielectric material, and a low-doped or undoped semiconductor channel sandwiched between the one or more gates and the substrate, wherein the low-doped or undoped semiconductor channel is bounded by the source and the drain.

Field-effect bipolar transistor

A power amplifier (amp) is disclosed. This power amp can include a first transistor configured in the common source (CS) amplification mode, wherein the gate terminal of the first transistor is used as the input port of the power amp; and a second transistor configured in the common gate (CG) amplification mode, wherein the drain terminal of the second transistor is used as the output port of the power amp. The power amp also includes a first inductive component coupled between the drain terminal of the first transistor and the ground to increase the impedance between the drain terminal of the first transistor and the ground, thereby increasing an output power at the output port. The power amp additionally includes a second inductive component coupled between the drain terminal of the first transistor and the source terminal of the second transistor to increase the conductance in the output admittance at the output port, thereby further increasing the output power at the output port.

Millimeter-wavelength power amplifiers having both high power gain and high output power

The disclosed embodiments provide various compensated charge pumps (CPs) which have a current mismatch compensation circuitry and various CP output-current-mismatch compensation structures based on using a dummy charge pump (CPdum) and feedback loops. In some embodiments, the CPdum is identically biased as the CP to be compensated. CPdum is configured to sense the output voltage and use the feedback loops to generate compensation currents for the CP. The compensation currents simultaneously compensate CP and CPdum. Moreover, CPdum is loaded with high impedance so that the compensation current makes sure CPdum doesn't have current mismatch. Because CP and CPdum have identical biasings and are compensated in the same manner with the same amount of current, CP output current mismatch is hence effectively eliminated.

Current-mismatch compensated charge pump for phase-locked loop applications

In one aspect, a system that provides a lens-integrated reconfigurable radiating source capable of two-dimensional continuous beam steering is disclosed. The system can include a silicon (Si) chip that further comprises a two-dimensional (2D) array of pixel sources/unit cells, wherein each unit cell in the 2D array includes an on-chip antenna for radiating power. The system further includes Si lens coupled to the silicon chip for controlling a directivity of a radiation beam generated by the chip. Note that the unit cells in the 2D array of unit cells can be independently activated to generate high-directivity radiation beams in a discrete set of firing angles. Moreover, the 2D array is configured to effectuate injection locking between adjacent unit cells in the 2D array when the adjacent unit cells are turned on simultaneously, wherein the injection locking effectuates a coherent radiation beam that can be continuously steered within a scanning range with fine resolution.

Reconfigurable radiator array source for lens-coupled continuous, wide-angle, and directive beam steering

Techniques, systems and architectures for generating desired phase shifts in a phased array to control the directions of radiation in a wide range of angles are disclosed. Particularly, phased array architectures based on novel PLL-coupled phase shifting techniques for implementation in millimeter-wave (mm-wave) and sub-terahertz (sub-THz) operations range are described. In one aspect, a phased array including an array of unit cells is disclosed. In some embodiments, each unit cell in the array of unit cells includes a dual-nested PLL that is configured to effectuate phase locking and frequency locking to a reference signal from an adjacent unit cell. Moreover, each PLL includes control circuitry that can generate a wide range of phase shifts between adjacent unit cells to facilitate phased-array operations. Note that using the dual-nested PLL to generate a desired phase shift between adjacent radiating elements eliminates the use of conventional lossy phase shifters in the phased array.

Millimeter-wave scalable PLL-coupled array for phased-array applications

Various metamaterials are disclosed. An example metamaterial comprises: a first portion with a plurality of nanoparticles; a second portion with a plurality of molecules configured to interlink with the plurality of nanoparticles; and a signal generator configured to provide a signal to the material. The first portion and the second portion of the material are configured to form a hybrid molecule-nanoparticle super-lattice. In some implementations, the first portion of the material is configured to have a mass configured to achieve, at least in part, a designated resonance frequency. The second portion of the material is, in some implementations, configured to have a molecular stiffness configured to achieve, at least in part, the designated resonance frequency. The signal generator is, in some implementations, configured to generate radio frequency (RF) signals.

High frequency hybrid phononic metamaterials for optical and electrical devices

Articles including oscillating units and methods for producing the same are disclosed. An example article includes one or more oscillator units, where each oscillator unit comprises: a micro strip transmission line extending from a first end to a second end. A first termination impedance is coupled to the first end and a second termination impedance is coupled to the second end. A first transistor is coupled between the first end and the midpoint; and a second transistor is coupled between the midpoint and the second end. The micro strip transmission line has a midpoint between the first end and the second end; and each oscillator unit generates a standing wave having a predetermined wavelength in the micro strip transmission line.

Scalable arrays of radiating oscillating units

The system includes an intermediate-frequency (IF) synthesizer that generates an IF signal based on a reference signal, and a sub-sampling PLL (SSPLL) that generates a high-frequency output signal based on an input. A switch selects either the reference signal or the IF signal to be the input to the SSPLL. When the reference signal is the input to the SSPLL, the frequency synthesizer operates in a low-noise normal-operating mode, and when the IF signal is the input to the SSPLL, the frequency synthesizer operates in a higher-noise, frequency-acquisition mode. A sub-sampling lock detector (SSLD) determines whether the frequency synthesizer becomes unlocked during the normal-operating mode, and if so, activates the switch to move the system into the frequency-acquisition mode. It also determines whether the frequency synthesizer becomes relocked to the target frequency during the frequency-acquisition mode, and if so, activates the switch to move the system into the normal-operating mode.

Growing community of inventors

Davis, CA, United States of America

Omeed Momeni