Silicor Materials Inc.

Omar Sidelkheir

Alain Paul Blosse

Bill Phan

Kamel Ounadjela

Fritz Kirscht

Matthias Heuer

Martin Kaes

Anis Jouini

Jean Patrice Rakotoniaina

Marcin Walerysiak

Renhua Zhang

John Gorman

A polarization resistant solar cell using an oxygen-rich interface layer is provided. The oxygen-rich interface layer may be comprised of SiON, which may have a graded profile that varies between oxygen-rich proximate to the solar cell to nitrogen-rich distal to the solar cell. A silicon oxide passivation layer may be interposed between the solar cell and the SiONgraded dielectric layer. The graded SiONdielectric layer may be replaced with a non-graded SiONdielectric layer and a SiN AR coating.

Polarization resistant solar cell design using an oxygen-rich interface layer

A quality control process for determining the concentrations of boron and phosphorous in a UMG-Si feedstock batch is provided. A silicon test ingot is formed by the directional solidification of molten UMG-Si from a UMG-Si feedstock batch. The resistivity of the silicon test ingot is measured from top to bottom. Then, the resistivity profile of the silicon test ingot is mapped. From the resistivity profile of the silicon test ingot, the concentrations of boron and phosphorous of the UMG-Si silicon feedstock batch are calculated. Additionally, multiple test ingots may be grown simultaneously, with each test ingot corresponding to a UMG-Si feedstock batch, in a multi-crucible crystal grower.

Quality control process for UMG-SI feedstock

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Sunnyvale, CA, United States of America

Omar Sidelkheir