Ttm Technologies Inc.

Anaren, Inc.

Omar Eldaiki

Chong Mei

Hans Peter Ostergaard

Samir Tozin

A wideband termination circuit layout is provided for high power applications. The circuit layout may include a dielectric layer having a first surface and a second surface. The circuit layout may also include an input port disposed over the first surface. The circuit layout may further include at least two resistive film patches disposed over the first surface of the dielectric layer and a tuning line between the at least two resistive films disposed over the first surface of the dielectric layer. The at least two resistive film patches are connected in series with the at least one tuning line.

Wideband termination for high power applications

A directional coupler may include a first coupled section comprising a first and a second coupled transmission lines, the first coupled transmission line having a first end coupled to an input port. The directional coupler may also include a second coupled section comprising a first and a second coupled transmission lines. The directional coupler may also include a third coupled section comprising a first and a second coupled transmission lines. The first coupled transmission line of the third coupled section has a first end coupled to a second end of the second coupled transmission line of the second coupled section and a second end coupled to an output port. The directional coupler may further include a delay section. A total electrical length of the first coupled section, the second coupled section, the third coupled section, and the delay section is about 90 degrees.

Directional couplers with DC insulated input and output ports

The present invention is directed to an impedance matching network for use at a predetermined frequency. The network includes: a low impedance port having a first impedance substantially equal to an impedance of an RF amplifier port; a first distributive transmission line network coupled to the low impedance port, the first distributive transmission line network including a plurality of first transmission lines, each first transmission line being characterized by a first characteristic impedance and a first electric line length at the predetermined frequency to form a first quasi-lumped reactive element so that the plurality of first transmission lines form a first quasi-lumped element impedance matching stage; at least one second distributive transmission line network coupled to the first distributive transmission line network and a high impedance port, the second distributive transmission line network including a plurality of second transmission lines, each second transmission line being characterized by a second characteristic impedance and a second electric line length at the predetermined frequency to form a second quasi-lumped reactive element so that the plurality of second transmission lines form at least one second quasi-lumped element impedance matching stage; and a high impedance port coupled to the at least one second quasi-lumped element impedance matching stage, the high impedance port having a second impedance substantially equal to a system impedance.

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East Syracuse, NY, United States of America

Omar Eldaiki