Agere Systems Inc.

Lucent Technologies Inc.

Alcatel-lucent USA Inc.

Omar D López

Sungho Jin

Susanne C Arney

Arman Gasparyan

Herbert R Shea

In one embodiment, an electrode is disposed on a surface of a first portion of the dielectric, with the first portion and the electrode forming an electrode region of the device. A charge-dissipation structure is then formed by implanting ions into the electrode region and a second portion of the dielectric located outside of the electrode region. In another embodiment, a charge-dissipation structure is formed by implanting ions into the dielectric of a movable part of an electro-mechanical system. Advantageously, ion implantation can be performed without masking, lithography, or elevated temperatures; the electrical properties of the resulting charge dissipation structure can be controlled relatively easily; and portions of the charge dissipation structure are protected from oxidation and/or corrosion by the dielectric material.

Providing a charge dissipation structure for an electrostatically driven device

A charge-dissipation structure is formed within the dielectric of an electrostatically driven device, such as a micro-electro-mechanical systems ('MEMS') device, by ion implantation. Electrical and other properties of the charge-dissipation structure may be controlled by selection of the species, energy, and dose of implanted ions. With appropriate properties, such a charge-dissipation structure can reduce the effect on device operation of mobile charges in or on the dielectric.

Charge dissipation in electrostatically driven devices

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Summit, NJ, United States of America

Omar D López