Intel Corporation

Omair Saadat

Tahir Ghani

Gilbert W Dewey

Anand S Murthy

Oleg Golonzka

Harold W Kennel

Nazila Haratipour

Dax M Crum

Dan S Lavric

Chi-hing Choi

Debaleena Nandi

Adedapo A Oni

Mauro J Kobrinsky

Cory C Bomberger

Jitendra Kumar Jha

Rushabh Shah

Source and drain contacts that provide improved contact resistance and contact interface stability for transistors employing silicon and germanium source and drain materials, related transistor structures, integrated circuits, systems, and methods of fabrication are disclosed. Such source and drain contacts include a contact layer of co-deposited titanium and silicon on the silicon and germanium source and drain. The disclosed source and drain contacts improve transistor performance including switching speed and reliability.

Co-deposition of titanium and silicon for improved silicon germanium source and drain contacts

Embodiments disclosed herein include semiconductor devices with improved contact resistances. In an embodiment, a semiconductor device comprises a semiconductor channel, a gate stack over the semiconductor channel, a source region on a first end of the semiconductor channel, a drain region on a second end of the semiconductor channel, and contacts over the source region and the drain region. In an embodiment, the contacts comprise a silicon germanium layer, an interface layer over the silicon germanium layer, and a titanium layer over the interface layer.

Low germanium, high boron silicon rich capping layer for PMOS contact resistance thermal stability

Gate-all-around integrated circuit structures having additive metal gates and gate dielectrics with a dipole layer are described. For example, an integrated circuit structure includes a first vertical arrangement of horizontal nanowires, and a second vertical arrangement of horizontal nanowires. A first gate stack is over the first vertical arrangement of horizontal nanowires, the first gate stack having a P-type conductive layer over a first gate dielectric including a high-k dielectric layer on a first dipole material layer. A second gate stack is over the second vertical arrangement of horizontal nanowires, the second gate stack having an N-type conductive layer over a second gate dielectric including the high-k dielectric layer on a second dipole material layer.

Fabrication of gate-all-around integrated circuit structures having additive metal gates and gate dielectrics with a dipole layer

Gate-all-around integrated circuit structures having additive metal gates are described. For example, an integrated circuit structure includes a first vertical arrangement of horizontal nanowires, and a second vertical arrangement of horizontal nanowires. A first gate stack is over the first vertical arrangement of horizontal nanowires, the first gate stack having a P-type conductive layer with a first portion surrounding the nanowires of the first vertical arrangement of horizontal nanowires and a second portion extending laterally beside and spaced apart from the first portion. A second gate stack is over the second vertical arrangement of horizontal nanowires, the second gate stack having an N-type conductive layer with a first portion surrounding the nanowires of the second vertical arrangement of horizontal nanowires and a second portion adjacent to and in contact with the second portion of the P-type conductive layer.

Fabrication of gate-all-around integrated circuit structures having additive metal gates

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Beaverton, OR, United States of America

Omair Saadat