Screen Holdings Co., Ltd.

Oma Nakajima

Mao Omori

Yukio Ono

Takahiro Kitazawa

Even a radiation thermometer using a quantum infrared sensor appropriately measures the temperature of a substrate irradiated with a flash of light. A heat treatment apparatus includes a quantum infrared sensor configured to measure a temperature of the first substrate and a temperature of the second substrate. The heat treatment apparatus further includes a temperature correction unit configured to correct, using a correction coefficient calculated based on the reference temperature and the shift temperature, a temperature of the second substrate on which second heat treatment having irradiation with the flash of light is performed, the temperature being measured by the quantum infrared sensor.

Heat treatment apparatus and heat treatment method

The semiconductor wafer is preheated by halogen lamps and then heated by a flash of light irradiation from flash lamps. A length of a light emission waveform of a flash of light applied from the flash lamps can be adjusted as appropriate. A data collection cycle (sampling interval) of a radiation thermometer that measures a surface temperature of the semiconductor wafer is made variable, and the longer the light emission waveform of the flash of light, the longer the data collection cycle. Even when a rising and falling time of the surface temperature of the semiconductor wafer changes due to the length of the light emission waveform of a flash of light, a temperature change can be included in a temperature profile with a constant number of data points until the surface temperature rises, goes through a maximum reaching temperature, and falls.

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Kyoto, Japan

Oma Nakajima