Intel Corporation

Olufemi I Dosunmu

Ansheng Liu

Mario J Paniccia

Michael T Morse

Kelly Christopher Magruder

John Heck

Richard O Jones

Alexander Krichevsky

Myung Jin Yim

Harel Frish

Boping Xie

Mark Isenberger

Aliasghar Eftekhar

Wei Qian

Lina He

Mengyuan Huang

Sungbong Park

Seth M Slavin

Nutan Gautam

Karan Mehta

In one embodiment of a superluminescent diode, a first diode adapted on a semiconductor die is to be forward-biased to output optical energy in response to a bias signal, and a second diode adapted on the semiconductor die is to be reverse-biased, the second diode to receive and absorb back propagating optical energy from the first diode and output a measure of the back propagating optical energy as an absorber feedback current. A comparator may be configured to compare the absorber feedback current to a reference current and output a comparison signal, and a driver control circuit coupled to the comparator may provide the bias signal based at least in part on the comparison signal. Other embodiments are described and claimed.

Superluminescent diode with integrated absorber and photodetector

In one embodiment, an apparatus includes a substrate, an oxide layer on the substrate, a silicon layer on the oxide layer, which includes a waveguide region and etched regions adjacent to the waveguide region, a germanium layer on the silicon layer and adjacent the waveguide region of the silicon layer, and a resistive element adjacent to the germanium layer to provide heat to the germanium layer in response to a current applied to the resistive element.

Germanium waveguide photodetector with integrated heater

Embodiments may relate to a wavelength-division multiplexing (WDM) transceiver that has a silicon waveguide layer coupled with a silicon nitride waveguide layer. In some embodiments, the silicon waveguide layer may include a tapered portion that is coupled with the silicon nitride waveguide layer. In some embodiments, the silicon waveguide layer may be coupled with a first oxide layer with a first z-height, and the silicon nitride waveguide layer may be coupled with a second oxide layer with a second z-height that is greater than the first z-height. Other embodiments may be described or claimed.

Integrated photonic transceiver

Optical receiver packages and device assemblies that include photodetector (PD) chips having focus lenses monolithically integrated on PD die backsides are disclosed. An example receiver package includes a support structure, a PD die, and an optical input device. The PD die includes a PD, integrated proximate to a first face of the PD die, and further includes a lens, integrated on, or proximate to, an opposite second face. The first face of the PD die faces the support structure, while the second face ('backside') faces the optical input device. The optical receiver architectures described herein may provide an improvement for the optical alignment tolerance issues, especially for high-speed operation in which the active aperture of the PD may have to be very small. Furthermore, architectures described herein advantageously enable integrating a focus lens in a PD die that may be coupled to the support structure in a flip-chip arrangement.

Optical receiver package with backside lens-integrated photodetector die

Embodiments of the present disclosure provide an apparatus comprising an integrated circuit with a chip-on-chip and chip-on-substrate configuration. In one instance, the apparatus may include an optical transceiver with an opto-electronic component disposed in a first portion of a die, and a trace coupled with the opto-electronic component and disposed to extend to a surface in a second portion of the die adjacent to the first portion, to provide electrical connection for the integrated circuit and another integrated circuit to be coupled with the second portion of the die in a chip-on-chip configuration. The apparatus may include a second trace disposed in the second portion of the die to extend to the surface in the second portion, to provide electrical connection for the other integrated circuit and a substrate to be coupled with the second portion of the die in a chip-on-substrate configuration. Other embodiments may be described and/or claimed.

Integrated circuit with chip-on-chip and chip-on-substrate configuration

A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.

Germanium/silicon avalanche photodetector with separate absorption and multiplication regions

A single optical receiver having a photo-detector with a wide optical bandwidth and high efficiency within the wide optical bandwidth, the photo-detector comprising: a first diode region of first doping type for receiving light; a second diode region of second doping type and of second thickness; an active region for converting the received light to an electronic signal, the active region having a third thickness and configured to reside between the first diode region and the second diode region; and a reflector coupled to the second diode region and having a silicon layer with a fourth thickness, the silicon layer residing between silicon oxide layers of fifth thicknesses, wherein the active region is configured to absorb the light of wavelengths of less than 900 nm, and wherein the reflector is configured to reflect the light of wavelengths from a range of 1260 nm to 1380 nm.

High speed, wide optical bandwidth, and high efficiency resonant cavity enhanced photo-detector

Sidewall photodetectors for integrated photonic devices and their method of manufacture. An embodiment includes a p-i-n film stack formed on a sidewall of a substrate semiconductor feature having sufficiently large area to accommodate the spot size of a multi-mode fiber. An embodiment includes a first sidewall photodetector coupled to a second sidewall photodetector by a waveguide, the first sidewall photodetector having an i-layer tuned to absorb a first wavelength of light incident to the first sidewall and pass a second wavelength of light to the second sidewall photodetector having an i-layer tuned to absorb the second wavelength.

Growing community of inventors

Santa Clara, CA, United States of America

Olufemi I Dosunmu