Seagate Technology Incorporated

Other

Olle Gunnar Heinonen

Dimitar Velikov Dimitrov

Haiwen Xi

Kaizhong Gao

Wenzhong Zhu

Dexin Wang

Yiran Chen

Xiaohua Lou

Zheng Gao

Sining Mao

Yuankai Zheng

Wonjoon Jung

Eric Shane Linville

Chunhong Hou

Michael Allen Seigler

Song Sheng Xue

Eric Walter Singleton

Wei Tian

Mark Thomas Kief

Jianhua Xue

Taras Grigorievich Pokhil

Yonghua Chen

Paul E Anderson

Venugopalan Vaithyanathan

Andreas Karl Roelofs

Johannes Van Ek

Yongchul Ahn

Muralikrishnan Balakrishnan

Markus Siegert

Declan Macken

Antoine Khoueir

Nurul Amin

Victor Sapozhnikov

Insik Jin

Patrick Joseph Ryan

Brian Lee

John D Stricklin

Sharat Batra

Qing I He

Brian William Karr

Thomas Roy Boonstra

Rene Johannes Marinus Van De Veerdonk

Shuiyuan Huang

Xilin Peng

Ivan Petrov Ivanov

Lijuan Zou

Xuefei Tang

Janusz Josef Nowak

Taras Grigoryevich Pokhil

Steven Paul Bozeman

Alexey V Nazarov

Janusz Jozef Nowak

Nural Amin

Vladyslav Alexandrovich Vasko

Described are magnetic recording heads that include auxiliary current wires that drive the write pole tip, augmenting the main coils that provide magnetomotive force to the write pole. The auxiliary wires are provided in close proximity to the write pole tip near the media-facing surface of the recording head, and are preferably in closer proximity to the write pole tip than are the main coils. In certain writer designs that include one or more heat sink structures positioned near or around the write pole tip, such as may be found in heat-assisted magnetic recording writer constructions, the auxiliary wire(s) may be accommodated near or around the heat sink structures, or the heat sink structures themselves can serve as the auxiliary wires.

Magnetic recording head writer having an auxiliary magnetomotive force coil

Embodiments of a single data storage device with multiple different data recording media surfaces are disclosed. In one embodiment, at least one of the data recording media surfaces is conventional, such as a continuous or discrete track recording media. Another of the data recording media surfaces is a relatively high areal density, high data rate recording media, such as a bit patterned media (BPM) recording media.

Data storage device with both bit patterned and continuous media

A transducer includes magnetic material formed on a substrate that is shaped to include a trailing edge, a leading edge and a pair of opposing sidewalls extending between the trailing edge and the leading edge. A layer of protective material is positioned in contact with each of the pair of sidewalls of the shaped magnetic material. Backfill material surrounds the protective material on each of the pair of sidewalls of the shaped magnetic material.

Protected transducer for dead layer reduction

A method and apparatus for stray magnetic field compensation in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a first tunneling barrier is coupled to a reference structure that has a perpendicular anisotropy and a first magnetization direction. A recording structure that has a perpendicular anisotropy is coupled to the first tunneling barrier and a nonmagnetic spacer layer. A compensation layer that has a perpendicular anisotropy and a second magnetization direction in substantial opposition to the first magnetization direction is coupled to the nonmagnetic spacer layer. Further, the memory cell is programmable to a selected resistance state with application of a current to the recording structure.

Non-volatile memory with stray magnetic field compensation

In order to improve a consistent data track during writing to a storage medium, a plurality of read sensors are affixed to a transducer head. In one implementation, the transducer head includes multiple read sensors placed up-track of the write pole. In another implementation, the transducer head includes at least one read sensor placed up-track of the write pole and at least one read sensor placed down-track of the write pole. Each position of the multiple read sensors relative to the write pole may be unique. One or more read signals of selected read sensors are used to determine the read location and therefore the write pole location relative to the storage medium.

Transducer head with multiple read sensors

A resistive sense memory cell includes a layer of crystalline praseodymium calcium manganese oxide and a layer of amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack. A first and second electrode are separated by the resistive sense memory stack. The resistive sense memory cell can further include an oxygen diffusion barrier layer separating the layer of crystalline praseodymium calcium manganese oxide from the layer of amorphous praseodymium calcium manganese oxide a layer. Methods include depositing an amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack.

Non-volatile resistive sense memory with improved switching

Spin-transfer torque memory includes a composite free magnetic element, a reference magnetic element having a magnetization orientation that is pinned in a reference direction, and an electrically insulating and non-magnetic tunneling barrier layer separating the composite free magnetic element from the magnetic reference element. The free magnetic element includes a hard magnetic layer exchanged coupled to a soft magnetic layer. The composite free magnetic element has a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit.

STRAM with composite free magnetic element

A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.

STRAM with compensation element and method of making the same

A magnetic memory element that has a stress-induced magnetic anisotropy. The memory element has a ferromagnetic free layer having a switchable magnetization orientation switchable, a ferromagnetic reference layer having a pinned magnetization orientation, and a non-magnetic spacer layer therebetween. The free layer may be circular, essentially circular or nearly circular.

Memory cell with stress-induced anisotropy

A tunneling magneto-resistive reader includes a sensor stack separating a top magnetic shield from a bottom magnetic shield. The sensor stack includes a reference magnetic element having a reference magnetization orientation direction and a free magnetic element having a free magnetization orientation direction substantially perpendicular to the reference magnetization orientation direction. A non-magnetic spacer layer separates the reference magnetic element from the free magnetic element. A first side magnetic shield and a second side magnetic shield is disposed between the top magnetic shield from a bottom magnetic shield, and the sensor stack is between the first side magnetic shield and the second side magnetic shield. The first side magnetic shield and the second side magnetic shield electrically insulates the top magnetic shield from a bottom magnetic shield.

Magnetic sensor with perpendicular anisotrophy free layer and side shields

Data storage systems are provided. Data storage systems illustratively include a writing element and a recording medium. In some embodiments, the writing element generates first and second magnetization fields that respectively record first and second magnetization patterns to the recording medium. In some embodiments, the writing element is de-saturated between recording the first and second magnetization patterns.

Pulse writing for bit patterned and continuous media recording

A magnetic sensor has at least a free sub-stack, a reference sub-stack and a front shield. The free sub-stack has a magnetization direction substantially perpendicular to the planar orientation of the layer and extends to an air bearing surface. The reference sub-stack has a magnetization direction substantially perpendicular to the magnetization direction of the free sub-stack. The reference sub-stack is recessed from the air bearing surface and a front shield is positioned between the reference sub-stack and the air bearing surface.

Magnetic sensor with a recessed reference layer assembly and a front shield

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Eden Prarie, MN, United States of America

Olle Gunnar Heinonen