Commissariat a L'energie Atomique

Centre National De La Recherche Scientifique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Crocus Technology Inc.

Ovalie Innovation

Olivier Redon

Bernard Dieny

Ricardo Sousa

Jean-Pierre Nozieres

Bernard Rodmacq

Philippe Robert

Bernard Viala

Ioan Lucian Prejbeanu

Marie-Claire Cyrille

Arnaud Walther

Ioan-Lucian Prejbeanu

Kévin Garello

Juan Martinez

Thierry Veronese

Alexis Cailly

Ihab Makki

Ilona Lonjou

A magnetic field sensor including a body including a magnetic mechanism capable of forming a torque applied on the body by action of an external magnetic field to be detected; a connector, separated from the body, mechanically connecting the body to an inlay portion of the sensor by at least one pivot link having an axis perpendicular to the direction of the magnetic field to be detected; a detector detecting stress applied by the body by action of the torque, separated from the connector and including at least one suspended stress gauge including a first part mechanically connected to the inlay portion, a second part mechanically connected to the body, and a third part provided between the first and second parts and suspended between the inlay portion and the body.

Magnetic field sensor with suspended stress gauge

According to this method for producing a magnetic tunnel junction, a film of a dielectric material capable of acting as a tunnel barrier is deposited between two nanocrystalline or amorphous magnetic films. The dielectric material constituting the tunnel barrier consists of an at least partially crystalline perovskite, and said material is deposited by ion beam sputtering in a vacuum chamber.

Method for producing a magnetic tunnel junction and magnetic tunnel junction thus obtained

The invention relates to a method for producing a device comprising magnetic blocks magnetized in different directions, comprising steps of: a) forming, in a stack of one or more layers of at least one antiferromagnetic material and one or more layers of at least one ferromagnetic material resting on a substrate, at least one first block and at least one second block, said blocks being longilineal and separate and extending respectively in a first main direction and in a second main direction, the first and the second main direction forming between them a first non-zero angle &#x3b1;, b) annealing said blocks at a temperature greater than the ordering temperature of said antiferromagnetic material or than the blocking temperature or than the N&#xe9;el temperature of said antiferromagnetic material.

Production of a device comprising magnetic structures formed on one and the same substrate and having respective different magnetization orientations

Magnetic tunnel junction magnetic device()for writing and reading uses a reference layer(c)and a storage layer(a)separated by a semiconductor or insulating layer(b), which can include an antiferromagnetic layer adjacent the storage layer. The blocking temperature of themagnetisationmagnetizationof the storage layer is less than that of the reference layer. The storage layer is heated()above the blocking temperature of itsmagnetisationmagnetization. A magnetic field()or a magnetic torque created by the injection of spin polarized electronsis applied()to it orientating its magnetization with respect to that of the reference layer without modifying the orientation of the reference layer.

Magnetic tunnel junction magnetic device, memory and writing and reading methods using said device

This magnetic memory with a thermally-assisted write, every storage cell of which consists of at least one magnetic tunnel junction, said tunnel junction comprising at least: one magnetic reference layer, the magnetization of which is always oriented in the same direction at the time of the read of the storage cell; one so-called 'free' magnetic storage layer, the magnetization direction of which is variable; one insulating layer sandwiched between the reference layer and the storage layer. The magnetization direction of the reference layer is polarized in a direction that is substantially always the same at the time of a read due to magnetostatic interaction with another fixed-magnetization layer called the 'polarizing layer'.

Magnetic tunnel junction magnetic memory

A thermally assisted magnetic write memory including of memory points or memory cells, each of which includes a double magnetic tunnel junction separated from one another by a layer made from an antiferromagnetic material, and whereof the stacking order of the layers constituting them is reversed with regard to one another. Each of the magnetic tunnel junctions includes a reference layer, a storage layer, an insulating layer inserted between the reference and storage layers, constituting the tunnel barrier of the magnetic tunnel junction concerned. The blocking temperature of the layer is lower than the blocking temperature of the reference layer of the corresponding magnetic tunnel junction. The product RA resistance&#xd7;area of the two tunnel barriers is different. Each memory point a way to heat the storage layers to a temperature above the blocking temperature of the layers.

Thermally assisted magnetic write memory

The memory comprises, on a semi-conducting substrate, a matrix of cells arranged in lines and columns and each designed to store an information bit. Each cell of a column comprises a magnetic tunnel junction having a line terminal and a column terminal respectively connected to a line conductor and, by means of a transistor, to a first column conductor associated to said column and to a first adjacent column. A gate of the transistor is connected to a gate conductor. The column terminal of each tunnel junction of said column is connected, by means of an additional transistor, to a second column conductor associated to said column and to a second adjacent column. A gate of the additional transistor is connected to an additional gate conductor. The two transistors associated to a cell can have a common electrode.

Magnetoresistive random access memory with high current density

A system and method for writing to a magnetic memory written in a thermally assisted manner, each memory point formed by a magnetic tunnel junction, and having a substantially circular cross-section of the memory which is parallel to the plane of the layers forming the tunnel junction. The tunnel junction includes at least a trapped layer with a fixed magnetisation direction, a free layer with a variable magnetisation direction with an insulating layer arranged there between. The free layer is formed from at least one soft magnetic layer and a trapped layer, with the two layers being magnetically coupled by contact. During read operations and at rest, the operating temperature of the memory is lower than the blocking temperature of the free and trapped layers, respectively.

Magnetic memory with a magnetic tunnel junction written in a thermally assisted manner, and method for writing the same

Magnetic tunnel junction magnetic device () for writing and reading uses a reference layer () and a storage layer () separated by a semiconductor or insulating layer (). The blocking temperature of the magnetisation of the storage layer is less than that of the reference layer. The storage layer is heated () above the blocking temperature of its magnetisation. A magnetic field () is applied () to it orientating its magnetization with respect to that of the reference layer without modifying the orientation of the reference layer.

A magnetic device including at least a memory cell having a first magnetic layer with a fixed magnetization direction. The first magnetic layer spin polarizes a writing current of electrons. The memory cell includes a second magnetic layer having a three-layered stack with a variable magnetization direction. An insulating or semi-conduction layer is formed between the first and second magnetic layers. The variable magnetization direction is oriented by spins of a spin polarized writing current. The three-layered stack includes two magnetic layers separated by a non-magnetic conducting layer. The first magnetic layer aligns the variable magnetization direction with the fixed magnetization direction by directing an incident writing current of electrons perpendicular through the first magnetic layer and then perpendicular through the second magnetic layer. The first magnetic layer opposes the variable magnetization direction with the fixed magnetization direction by directing another incident writing current of electrons perpendicular through the second magnetic layer and then perpendicular through the first magnetic layer to.

Three-layered stacked magnetic spin polarization device with memory

A magnetic spin polarizing a magnetization rotation device with a memory and a writing process using such a device. The device is configured to include an apparatus for polarizing the spin of electrons, including a magnetic layer having magnetization perpendicular to the plane of magnetization of respective first and second magnetic layers. The magnetization of the second magnetic layer rotates within a plane, which is either the plane of the layer or a perpendicular plane.

Growing community of inventors

Seyssinet-Pariset, France

Olivier Redon