Commissariat a L'energie Atomique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Olivier Monnet

Corinne Mestais

Jean-Pierre Rostaing

Guillaume Montemont

Alain Chapuis

Jean-Paul Bonnefoy

Francis Sauvage

Jacques Vacher

Marie-Claude Gentet

François Lebrun

Arnaud Drezet

Ren&eacute; Dupre

Fran&ccedil;ois Lebrun

A method for manufacturing an ionizing radiation detection device having a block of a semiconductor material adapted to undergo local separations of charges between positive and negative charges under the effect of ionizing radiation. The device including a first series of at least two collecting electrodes formed on the surface of the semiconductor block, and a second series of at least two non-collecting electrodes formed on a support and separated from the semiconductor block by an insulating layer. During processing, after forming the insulating layer on the support so as to cover the non-collecting electrodes, the block of semiconductor material bearing the collecting electrodes and the support bearing the non-collecting electrodes and the insulating layer are assembled.

Method of manufacturing an ionizing radiation detection device

A device that detects electromagnetic radiation, including an assembly of juxtaposed parallelepipedic semiconductor detection blocks, each detection block including a given length separating a detection face and at least one rear face opposite to the said detection face, a given thickness separating a first polarization face with one or more electrodes and a second polarization face with one or more other electrodes, and a given width.

Device for detecting radiation with improved arrangement

A tomograph type detection device including a plurality of detection elements arranged in a form of a ring and electrodes on each face of the elements. Each electrode includes a connector, all the connectors being located on the external periphery of the ring of detection elements.

Tomograph comprising detectors having a specific shape

Compact detection device for a gamma camera

A semiconductor detector including at least one block of detector pixels, each detector pixel being composed of a semiconductor element with a first face covered by a first armature and a second face covered by a second armature. The detector pixels are assembled side by side such that the first armatures define a detector plane. The first armatures are covered by a plane conducting structure that connects them together electrically. The detector does not have any dead area in which detection is impossible. The semiconductor is particularly applicable to detection of ionizing radiation (gamma rays, X-rays, etc.)

Detector with semiconductor for detecting ionizing radiation having a plane conducting structure

A micro gamma camera having several gamma radiation detection devices adjacent to each other. The detection devices are laid out above an information processing device that processes information output by the detection devices. Each of the detection devices includes: a plurality of detectors positioned adjacent to each other to form a detection plane; a first substrate including a detection plane polarizer and a first signal processor for processing the signal detected by the detection plane; a second substrate placed between the detection plane and the first substrate; a ground plane placed between the first and second substrates; and a third substrate including second and third signal processors.

Micro gamma camera with semiconducting detectors

A system for processing signals from a radiation detector with semiconductors. A plurality of elementary detectors are placed side-by-side along a detection surface or a detection volume in which radiation referred to as incident radiation is capable of giving up its energy in at least one interaction. The device includes the supplying in response to each incident ray, an amount of energy corresponding to the sum of the energies given up during each interaction induced by the incident radiation. This device may be used in medical imaging.

Device and method for processing signals from a radiation detector with semiconductors

The invention relates to a device for measuring the rise time of the electronic component of a signal disturbed by electronic noise and whose signal-to-noise ratio is mediocre. It incorporates a differentiating circuit (C,C,) having at least one resistor (r) and one capacitor (c) implementing a high pass filter for filtering the low frequency background noise of the signal from the detector and a discriminating circuit (C,C,) incorporating a comparator (k) for performing a comparison with the filtered signal from the differentiating circuit and an offset voltage selected as a function of the noise level interfering with the signal from the detector.

Device for measuring the rise time of signals interfered with by noise from gamma or X radiation detectors

Device to display disintegrations of positrons and comprising at least one pair of scintillators (28) sensitive to gamma radiations and disposed opposite each other, photoelectron multiplier units (30) each associated with one scintillator, devices (34) for the barycentric measurement of the position of scintillations in the scintillators, devices (36) for determining the times of flight of the gamma radiations detected in coincidence in each of the paired scintillators, devices (38) for localizing positron disintegrations, and an image display system (40).

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Tullins, France

Olivier Monnet