Stmicroelectronics S.a.

Stmicroelectronics Gmbh

Stmicroelectronics (crolles 2) Sas

International Business Machines Corporation

Globalfoundries Inc.

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Stmicroelectronics (rousset) Sas

Olivier Menut

Yvon Gris

Herve Jaouen

Guillaume Bouche

Frank Scott Johnson

Marc Laurent Tarabbia

Gregory Allen Northrop

David Turgis

Herv&eacute; Jaouen

Yorick Trouiller

Nicolas Planes

Sylvie Del Medico

Lorenzo Ciampolini

Emek Yesilada

Mitesh Goyal

Laurent Bergher

Rwik Sengupta

Franck Foussadier

Rohit Kumar Gupta

Raphaël Bingert

Electronic component including a ternary content-addressable memory component, configured to compare the input data items with a set of pre-recorded reference data words; the memory component incorporates a matrix of elementary cells arranged in lines and columns; each line incorporates cells in each of which is recorded one bit of one of the reference data words; the cells of a given column are dedicated to the comparison of the same bit of the input data word; each cell incorporates: two memory points storing the data representing the reference data bit; a comparison circuit connected to the memory points, with a comparison point of which the potential represents the comparison if the input data bit and the data stored in the memory points, and also incorporating a common comparison circuit to which are connected the comparison circuits of all or part of the cells of a given column; the comparison circuit incorporates terminals to which the bit from the input data word and its complement are applied.

Electronic component including a matrix of TCAM cells

An integrated circuit (IC) cell may include first and second semiconductor regions, and parallel electrically conductive lines extending above the first and second semiconductor regions. The IC cell may further include electrically conductive line contacts electrically connected to the parallel electrically conductive lines, and may include at least one first line contact between the first semiconductor region and a corresponding end of the IC cell, and at least one second line contact between the first semiconductor region and the second semiconductor region. Adjacent ones of the electrically conductive lines may be respectively coupled to one of the at least one first line contact and to one of the at least one second line contact.

Standard cell for integrated circuit

Integrated circuits and methods for fabricating integrated circuits are provided. In an embodiment, an integrated circuit includes a standard cell having a first boundary, a second boundary opposite the first boundary, a third boundary interconnecting the first and second boundaries, and a fourth boundary opposite the third boundary and interconnecting the first and second boundaries. The standard cell further includes parallel active areas extending from the first boundary to the second boundary. Also, the standard cell has parallel gate strips extending from the third boundary to the fourth boundary and over the active areas. A cut mask overlies the gate strips. An interconnect is positioned overlying the cut mask and forms an electrical connection with a selected gate strip.

Integrated circuits having a continuous active area and methods for fabricating same

A cell library intended to be used to form an integrated circuit, this library defining a first cell including a first MOS transistor of minimum dimensions, and a second cell including a second MOS transistor of lower leakage current, wherein the second cell takes up the same surface area as the first cell, and the second MOS transistor has a gate of same length as the gate of the first MOS transistor across at least a first width in its central portion, and of greater length across at least a second width on either side of the central portion.

Cell library, integrated circuit, and methods of making same

A semiconductor device includes a substrate of a first type of conductivity provided with at least one gate on one of its faces, and at least two doped regions of a second type of conductivity for forming a drain region and a source region. The two doped regions are arranged in the substrate flush with the face of the substrate on each side of a region of the substrate located under the gate for forming a channel between the drain and source regions. At least one region of doping agents of the second type of conductivity is implanted only in the channel.

Semiconductor device and method for implantation of doping agents in a channel

An integrated circuit has at least one semiconductor device for storing charge that includes at least one elementary active component and at least one elementary storage capacitor. The device includes a substrate having a lower region containing at least one buried capacitive elementary trench forming the elementary storage capacitor, and an elementary well located above the lower region of the substrate and isolated laterally by a lateral electrical isolation region. The elementary active component is located in the elementary well or in and on the elementary well. The capacitive elementary trench is located under the elementary active component and is in electrical contact with the elementary well. In one preferred embodiment, the lateral electrical isolation region is formed by a trench filled with a dielectric material and has a greater depth than that of the elementary well. Also provided is a method for fabricating an integrated circuit that includes a semiconductor device for storing charge.

Integrated circuit and fabrication process

An integrated circuit is provided that includes a substrate incorporating a semiconductor photodiode device having a p-n junction. The photodiode device includes at least one capacitive trench buried in the substrate and connected in parallel with the junction. In a preferred embodiment, the substrate is formed from silicon, and the capacitive trench includes an internal doped silicon region partially enveloped by an insulating wall that laterally separates the internal region from the substrate. Also provided is a method for fabricating an integrated circuit including a substrate that incorporates a semiconductor photodiode device having a p-n junction.

Fabrication process for integrated circuit having photodiode device

An initial single-crystal substratehaving, locally and on the surface, at least one discontinuity in the single-crystal lattice is formed. The initial substrate is recessed at the discontinuity. The single-crystal lattice is amorphized around the periphery of the recess. A layer of amorphous material having the same chemical composition as that of the initial substrate is deposited on the structure obtained. The structure obtained is thermally annealed in order to recrystallize the amorphous material so as to be continuous with the single-crystal lattice of the initial substrate.

Process for fabricating a single-crystal substrate and integrated circuit comprising such a substrate

The transistor includes an emitter regiondisposed in a first isolating wellformed in a semiconductor bulk. An extrinsic collector regionis disposed in a second isolating wellformed in the semiconductor bulk SB and separated laterally from the first well by a bulk separator area. An intrinsic collector region is situated in the bulk separator areain contact with the extrinsic collector region. An intrinsic base regionis formed which is thinner laterally than vertically and in contact with the intrinsic collector region and in contact with the emitter region through bearing on a vertical flank of the first isolating well facing a vertical flank of the second isolating well. An extrinsic base regionis formed which is substantially perpendicular to the intrinsic base region in the top part of the bulk separator area, and contact terminals C, B, E respectively in contact with the extrinsic collector region, the extrinsic base region, and the emitter region.

Lateral operation bipolar transistor and a corresponding fabrication process

The semiconductor substrate of the integrated circuit includes at least one dielectrically isolating, vertical buried trench ( ) having a height at least five times greater than its width, the trench laterally separating two regions ( ), and an epitaxial semiconductor layer ( ) coveting the trench. An application is advantageously suited to MOS, CMOS and BiCMOS technologies.

Integrated circuit with a reduced risk of punch-through between buried layers, and fabrication process

A method for manufacturing a contact between a semiconductor substrate and a doped polysilicon layer deposited on the substrate with an interposed insulating layer, wherein elements adapted to making the insulating layer permeable to the migration of dopants from the polysilicon layer to the substrate are implanted.

Method for manufacturing a bipolar transistor in a CMOS integrated circuit

A method of fabricating an integrated circuit including a monocrystalline silicon substrate, a layer of polycrystalline silicon on the top surface of the substrate and doped with at least two dopants with different rates of diffusion, in which method annealing is performed at a temperature and for a time such that a first dopant diffuses into a first zone and a second dopant diffuses into a second zone larger than the first zone.

Method of fabricating an integrated circuit

Integrated circuit having photodiode device and associated fabrication process

The integrated circuit comprises a semiconductor substrate SB supporting a memory cell PM of the DRAM type comprising an access transistor T and a storage capacitor TRC. The access transistor is made on the substrate, and the substrate includes a capacitive trench TRC buried beneath the transistor and forming the storage capacitor, the capacitive trench being in contact with one of the source and drain regions of the transistor.

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Grenoble, France

Olivier Menut