Soitec

S.o.i.tec Silicon on Insulator Technologies

S.o.i. Tec Silicon

Olivier Ledoux

Bernard Aspar

Christophe Figuet

Jean-Marc Bethoux

Alexis Drouin

David Sotta

Francois Boedt

Eric Butaud

Morgane Logiou

Roland Brun

Christophe Desrumaux

Olivier Bonnin

Berhard Aspar

Raphaël Caulmilone

Christophe Desrumeaux

A method for manufacturing a plurality of crystalline semiconductor islands having a variety of lattice parameters comprises providing a substrate including a medium, a flow layer disposed on the medium, and a plurality of strained crystalline semiconductor islands having an initial lattice parameter arranged on the flow layer. The strained semiconductor islands are selectively treated so as to form a first group of strained islands having a first lateral expansion potential, and a second group of strained islands having a second lateral expansion potential that is different from the first lateral expansion potential. The substrate is heat treated at a temperature at or above a glass transition temperature of the flow layer to cause differentiated relaxation of the islands of the first and second groups, such that a lattice parameter of the first group of relaxed islands differs from a lattice parameter of the second group of relaxed islands.

Growth substrate for forming optoelectronic devices, method for manufacturing such a substrate, and use of the susbstrate, in particular in the field of micro-display screens

The invention relates to a process for manufacturing a semiconductor substrate, characterized in that it comprises providing at least one donor semiconductor substrate comprising at least one useful silicon layer; inspecting the donor substrate via an inspecting machine in order to detect whether the useful layer contains emerging cavities of a size larger than or equal to a critical size, said critical size being strictly smaller than 44 nm; and manufacturing a semiconductor substrate comprising at least part of the useful layer of the donor substrate if, considering cavities of a size larger than or equal to the critical size, the density or number of cavities in the useful layer of the donor substrate is lower than or equal to a critical defect density or number.

Process for manufacturing a semiconductor substrate, and semiconductor substrate obtained

The invention relates to a method for fabricating a semiconductor substrate by providing a silicon on insulator type substrate that includes a base, an insulating layer and a first semiconductor layer, doping the first semiconductor layer to thereby obtain a modified first semiconductor layer, and providing a second semiconductor layer with a different dopant concentration than the modified first semiconductor layer over or on the modified first semiconductor layer. With this method, an improved dopant concentration profile can be achieved through the various layers which makes the substrates in particular more suitable for various optoelectronic applications.

Method for fabricating a semiconductor substrate

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Grenoble, France

Olivier Ledoux