Stmicroelectronics S.a.

Stmicroelectronics (crolles 2) Sas

Olivier Kermarrec

Yves Campidelli

Yves Morand

Daniel Bensahel

Vincent Cosnier

Aomar Halimaoui

A method for manufacturing an insulated semiconductor layer, including: forming a porous silicon layer on a single-crystal silicon surface; depositing an insulating material so that it penetrates into the pores of the porous silicon layer; eliminating the insulating material to expose the upper surface of the porous silicon; and growing by epitaxy a semiconductor layer.

Method for manufacturing a structure of semiconductor-on-insulator type

A method for forming, by epitaxy, a heteroatomic single-crystal semiconductor layer on a single-crystal semiconductor wafer, the crystal lattices of the layer and of the wafer being different, including forming, before the epitaxy, in the wafer surface, at least one ring of discontinuities around a useful region.

Heteroatomic single-crystal layers

A process and a device for fabricating a semiconductor device having a gate dielectric made of high-k material, includes a step of depositing, directly on the gate dielectric, a first layer of SiGe, where 0.5&#x3c;x&#x2266;1, at a temperature substantially below the temperature at which a poly-Si is deposited by thermal chemical vapor deposition (CVD).

Method of fabricating a semiconductor device comprising a gate dielectric made of high dielectric permittivity material

A method of forming, on a single-crystal semiconductor substrate of a first material, quantum dots of a second material, including growing by vapor phase epitaxy the second material on the first material in optimal conditions adapted to ensuring a growth at a maximum controllable rate. In an initial step, a puff of a gas containing the second material is sent on the substrate, in conditions corresponding to a deposition rate much faster than the maximum controllable rate.

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Gieres, France

Olivier Kermarrec