Stmicroelectronics (Crolles 2) Sas

Stmicroelectronics (Grenoble 2) Sas

STMicroelectronics

Stmicroelectronics (Rousset) Sas

Olivier Hinsinger

Philippe Boivin

Pascal Urard

Olivier Weber

Laurent Favennec

Jean-Pierre Oddou

Daniel Gloria

Christophe Regnier

Daniel Benoit

Franck Arnaud

Philippe Brun

Stephane Zoll

Eric Sabouret

Lucile Broussous

Emmanuel Gourvest

Krysten Rochereau

Flore Persin-Crelerot

David Galpin

Pierre Morin

Philippe Cavenel

Lionel Balme

An integrated circuit includes a substrate with an active area, a first insulating layer, a second insulating layer, and a phase-change material. The integrated circuit further includes a heating element in an L-shape, with a long side in direct physical contact with the phase-change material and a short side in direct physical contact with a via. The heating element is surrounded by first, second, and third insulating spacers, with the first insulating spacer having a planar first sidewall in contact with the long side of the heating element, a convex second sidewall, and a planar bottom face in contact with the short side of the heating element. The second and third insulating spacers are in direct contact with the first insulating spacer and the long side of the heating element.

Chip containing an onboard non-volatile memory comprising a phase-change material

An integrated circuit includes a solder pad which includes, in a superposition of metallization levels, an underlying structure formed by a network of first regular metal tracks that are arranged for reinforcing the mechanical strength of the underlying structure and electrically connecting between an upper metallization level and a lower metallization level of the underlying structure. The underlying structure further includes a detection electrical path formed by second metal tracks passing between the first metal tracks in the metallization levels, the detection electrical path having an input terminal and an output terminal. Electrical sensing of the detection electrical path is made to supply a measurement which is indicative of the presence of cracks in the underlying structure.

Crack sensor for sensing cracks in a solder pad, and method for production quality control

An electronic chip includes memory cells made of a phase-change material and a transistor. First and second vias extend from the transistor through an intermediate insulating layer to a same height. A first metal level including a first interconnection track in contact with the first via is located over the intermediate insulating layer. A heating element for heating the phase-change material is located on the second via, and the phase-change material is located on the heating element. A second metal level including a second interconnection track is located above the phase-change material. A third via extends from the phase-change material to the second interconnection track.

A memory cell includes a heating element topped with a phase-change material. Two first silicon oxide regions laterally surround the heating element along a first direction. Two second silicon oxide regions laterally surround the heating element along a second direction orthogonal to the first direction. Top surfaces of the heating element and the two first silicon oxide regions are coplanar such that the heating element and the two first silicon oxide regions have a same thickness.

Memory cell comprising a phase-change material

A back-side illuminated image sensor includes memory regions formed in a semiconductor wafer. Each memory region is located between two opaque walls which extend into the semiconductor wafer. An opaque screen is arranged at the rear surface of the memory region and in electrical contact with the opaque walls.

Back-side illuminated image sensor

A wireless unit includes a first motion sensitive device; communications circuitry for wirelessly communicating with a further wireless unit; and a processing device configured to compare at least one first motion vector received from the first motion sensitive device with at least one second motion vector received from a second motion sensitive device of the further wireless unit.

Wireless device pairing

A stand-alone device comprising a silicon wafer having its front surface including a first layer of a first conductivity type and a second layer of a second conductivity type forming a photovoltaic cell; first vias crossing the wafer from the rear surface of the first layer and second vias crossing the wafer from the rear surface of the second layer; metallization levels on the rear surface of the wafer, the external level of these metallization levels defining contact pads; an antenna formed in one of the metallization levels; and one or several chips assembled on said pads; the metallization levels being shaped to provide selected interconnects between the different elements of the device.

Photovoltaic device with through-vias

Growing community of inventors

Barraux, France

Olivier Hinsinger