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Stmicroelectronics S.a.

Stmicroelectronics (crolles 2) Sas

Stmicroelectronics (grenoble 2) Sas

Olivier Guiller

Sylvain Joblot

Jean-Philippe Colonna

Yann Lamy

Thierry Mourier

A method for producing a capacitor stack in one portion of a substrate, the method including: forming a cavity along a thickness of the portion of the substrate from an upper face of the substrate, depositing a plurality of layers contributing to the capacitor stack onto the wall of the cavity and onto the surface of the upper face, and removing matter from the layers until the surface of the upper face is reached. The forming of the cavity includes forming at least one trench and, associated with each trench, at least one box. The at least one trench includes a trench outlet that opens into the box. The box includes a box outlet that opens at the surface of the upper face, and the box outlet being shaped to be larger than the trench outlet.

Method for producing a capacitor

A device includes a substrate and an integrated-circuit interconnect on a first side. A capacitor passes through the substrate possessing a first electrode having a first contact face electrically coupled to a first electrically conductive zone placed on a second side of the substrate and a second electrode electrically coupled to the interconnect. A through-silicon via passes through the substrate having at one end a first contact face electrically coupled to a second electrically conductive zone placed on said second side of the substrate and at the other end a part electrically coupled to the interconnect part. The two first contact faces are located in the same plane.

Process for producing a through-silicon via and a through-silicon capacitor in a substrate, and corresponding device

Growing community of inventors

Grenoble, France

Olivier Guiller