Commissariat a L'energie Atomique Et Aux Energies Alternatives

Commissariat a L'energie Atomique

Olivier Gravrand

Jérôme Le Perchec

Francois Boulard

Jacques Baylet

Francois Marion

Johan Rothman

Roch Espiau De Lamaestre

Gérard Destefanis

Salim Boutami

Jean-Michel Leger

François Marion

Giacomo Badano

Gerard Destefanis

François Bertrand

Alexandre Ferron

François Boulard

David Fowler

Matthieu Duperron

The invention relates to a photodiode type structure (comprising: a support () including at least one semiconductor layer, the semiconductor layer () including of a first semiconductor zone () of a first type of conductivity and a mesa () in contact with the semiconductor layer (). The mesa () includes of a second semiconductor zone (), known as absorption zone, said second semiconductor zone () being of a second type of conductivity. The second semiconductor zone has a concentration of majority carriers such that the second semiconductor zone () is depleted in the absence of polarization of the structure (). The structure () further comprises a third semiconductor zone () of the second type of conductivity made of a third material transparent in the absorbed wavelength range. The third semiconductor zone () is interposed between the first and the second semiconductor zones () while being at least partially arranged in the semiconductor layer (). The invention also relates to a component and a method for manufacturing such a structure ().

Photodiode type structure, component and method for manufacturing such a structure

A semiconducting structure configured to receive electromagnetic radiation, a method for manufacturing such a structure, and a semiconductor component, the semiconductor structure including: a first semiconducting area of a first type of conductivity, a second semiconducting area of a second type of conductivity opposite to the first type of conductivity, the second area being in contact with the first area to form a semiconducting junction. The second area includes a portion for which a concentration of majority carriers is at least ten times less than a concentration of majority carriers of the first area. The second area and its portion are essentially made in a first cavity configured to focus in the first cavity at least one portion of the electromagnetic radiation.

Semiconductor structure comprising an absorbing area placed in a focusing cavity

A semi-conducting component including a semi-conducting layer of a first conductivity type including a plurality of semi-conducting zones of a second conductivity type opposite that of the semi-conducting layer, and an insulating layer. The component further includes a first bias mechanism configured to bias the semi-conducting layer and a second bias mechanism configured to bias a semi-conducting zone. The first bias mechanism includes a conducting layer in contact with the insulating layer and which includes passageways for each second bias mechanism with the spacing between the conducting layer and the second bias mechanism which is located facing the corresponding semi-conducting zone.

Semiconductor component and process for fabricating a semiconductor component

A method of manufacturing a photodiode including a useful layer made of a semi-conductor alloy. The useful layer has a band gap value which decreases from its upper face to its lower face. A step of producing a first doped region forming a PN junction with a second doped region of the useful layer, said production of a first doped region including a first doping step, so as to produce a base portion; and a second doping step, so as to produce at least one protuberance protruding from the base portion and in the direction of the lower face.

Method of manufacturing a low noise photodiode

A semiconducting structure configured to receive electromagnetic radiation and transform the received electromagnetic radiation into an electric signal, the semiconductor structure including a semiconducting support within a first surface defining a longitudinal plane, a first zone with a first type of conductivity formed in the support with a second zone with a second type of conductivity that is opposite of the first type of conductivity to form a semiconducting junction. A mechanism limiting lateral current includes a third zone formed in the support in lateral contact with the second zone, the third zone having the second type of conductivity for which majority carriers are electrons. The third zone has a sufficient concentration of majority carriers to have an increase in an apparent gap due to a Moss-Burstein effect.

Semiconductor structure able to receive electromagnetic radiation, semiconductor component and process for fabricating such a semiconductor structure

A semi-conducting structure, configured to receive an electromagnetic radiation and to transform the electromagnetic radiation into an electric signal, including: a first zone and a second zone of a same conductivity type and of same elements; a barrier zone, provided between the first and second zones, for acting as a barrier to majority carriers of the first and second zones on a barrier thickness, the barrier zone having its lowest bandgap energy defining a barrier proportion; and a first interface zone configured to interface the first zone and the barrier zone on a first interface thickness, the first interface zone including a composition of elements which is varied from a proportion corresponding to that of the first material to the barrier proportion, the first interface thickness being at least equal to half the barrier thickness.

Semiconductor structure, device comprising such a structure, and method for producing a semiconductor structure

This photodetector capable of detecting electromagnetic radiation comprises:

Photodetector with a plasmonic structure

A bispectral detector comprising upper and lower semiconductor layers of a first conductivity type in order to absorb a first and a second electromagnetic spectrum, separated by an intermediate layer that forms a barrier; semiconductor zones of a second conductivity type implanted in upper layer and lower layer and each implanted at least partially in the bottom of an opening that passes through upper layer and intermediate layer; and conductor elements connected to semiconductor zones. At least that part of each opening that passes through upper layer is separated from the latter by a semiconductor cap layer: whereof the concentration of dopants of the second conductivity type is greater than 10cm; and whereof the thickness is chosen as a function of said concentration so that it exceeds the minority carrier diffusion length in the cap layer.

Bispectral multilayer photodiode detector and method for manufacturing such a detector

This photodetector comprises a doped semiconductor layer; a reflective layer located underneath semiconductor layer; a metallic structure placed on semiconductor layer that forms, with semiconductor layer, a surface plasmon resonator, a plurality of semiconductor zones formed in semiconductor layer and oppositely doped to the doping of the semiconductor layer; and for each semiconductor zone, a conductor that passes through the photodetector from reflective layer to at least semiconductor zone and is electrically insulated from metallic structure, with semiconductor zone associated with corresponding conductor thus determining an elementary detection surface of the photodetector.

Backlit detector for the detection of electromagnetic radiation around a predetermined wavelength, including a semiconductor absorption layer, formed above a transparent medium, capable of transmitting at least some of said radiation, and a mirror above the semiconductor layer, and placed between the mirror and the semiconductor layer, a periodic grating of metallic patterns, the mirror and the grating being included in a layer of material transparent to said radiation and formed on the semiconductor layer.

Photodetector optimized by metal texturing provided on the rear surface

This bispectral detector comprises a plurality of unitary elements for detecting a first and a second electromagnetic radiation range, consisting of a stack of upper and lower semiconductor layers of a first conductivity type which are separated by an intermediate layer that forms a potential barrier between the upper and lower layers; and for each unitary detection element, two upper and lower semiconductor zones of a second conductivity type opposite to the first conductivity type, are arranged respectively so that they are in contact with the upper faces of the upper and lower layers so as to form PN junctions, the semiconductor zone being positioned, at least partially, in the bottom of an opening that passes through the upper and intermediate layers. The upper face of at least one of the upper and lower layers is entirely covered in a semiconductor layer of the second conductivity type. Cuts are made around each unitary detection element from the upper face of the stack and at least through the thickness of each semiconductor layer of the second conductivity type, entirely covering one or other of the upper and lower semiconductor layers of the first conductivity type, so as to form semiconductor zones of the second conductivity type.

Multilayer bispectral photodiode detector

The invention relates to a method for producing a matrix of electronic components, comprising a step of producing an active layer on a substrate, and a step of individualizing the components by forming trenches in the active layer at least until the substrate emerges. The method comprises steps of depositing a layer of functional material on the active layer, depositing a photosensitive resin on the layer of material in such a way as to fill said trenches and to form a thin film on the upper face of the components, at least partially exposing the resin to radiation while underexposing the portion of resin in the trenches, developing the resin in such a way as to remove the properly exposed portion thereof, removing the functional material layer portion that shows through after the development step, and removing the remaining portion of resin.

Method for producing a matrix of individual electronic components and matrix produced thereby

On a front face of a substrate transparent to the radiation considered, pixels are confined in a stack of absorbent semi-conducting material layers by a network of channels. An insulating layer covers the bottom and the side walls of the channels. An electrically conducting layer covers the insulating layer on the bottom and on the side walls of the channels confining at least a part of the pixels. The conducting layer can be voltage polarized.

Photovoltaic infrared radiation detector with independent three-dimensional conducting grid

A vectorial magnetometer (), measures the components of a magnetic field in three directions (Oxyz) using a scalar magnetometer (). The field is periodically modulated in each of the directions by generators (Gx, Gy, Gz) which have a specific frequency for each direction and that power coils (Ex, Ey, Ez). Synchronous demodulation of the of the output signal of the scalar magnetometer () for each of the three frequencies permits the relative continuous component of each axis to be found. The vectorial magnetometer () is characterized in that it has means (Dx D'x, Dy D&#x2032;y, Dz D&#x2032;z) that can carry out a double demodulation for phase and quadrature for each of the frequencies and processing means () that use the continuous component modules for phase and quadrature to calculate a transfer function of the scalar magnetometer at the frequency in question, and to apply this function to the correction of the components.

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Fontanil Cornillon, France

Olivier Gravrand