Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Stmicroelectronics S.a.

Stmicroelectronics Gmbh

Stmicroelectronics (grenoble 2) Sas

Aledia

Forschungszentrum Julich Gmbh

Olivier Girard

Sylvie Menezo

Olivier Le Neel

Brigitte Soulier

Cédrick Chappaz

Vincent Beix

Marion Volpert

Thomas Lacave

Denis Renaud

Yves Gilot

Fabio Ferrari

Laurent Frey

Pascal Ancey

Xavier Hugon

Laurent Mollard

Tiphaine Dupont

Christel Dieppedale

Carlo Cagli

Philippe Gibert

Christophe Bouvier

Emilie Pougeoise

David Cooper

Rafal Edward Dunin-Borkowski

Serge Laffont

Nacer Aitmani

Martial Duchamp

Optical scanner

An optoelectronic device including a substrate having opposite first and second surfaces; insulation trenches extending through the substrate, surrounding portions of the substrate and electrically insulating the portions from each other, each insulation trench being filled with at least one electrically insulating block and a gaseous volume or being filled with an electrically conductive element electrically isolated from the substrate; at least one light-emitting diode resting on the first surface for each portion of the substrate, the light-emitting diodes comprising wired, conical, or frustoconical semiconductor elements; an electrode layer covering at least one of the light-emitting diodes and a conductive layer overlying the electrode layer around the light-emitting diodes; and a layer encapsulating the light-emitting diodes and covering the entire first surface.

Optoelectronic device comprising light-emitting diodes

A hybrid semiconductor laser component comprising at least one first emitting module comprising an active zone shaped to emit electromagnetic radiation at a given wavelength; and an optical layer comprising at least one first waveguide optically coupled with the active zone, the waveguide forming with the active zone an optical cavity resonating at the given wavelength. The hybrid semiconductor laser component also comprises a heat-dissipating semiconductor layer, the heat-dissipating semiconductor layer being in thermal contact with the first emitting module on a surface of the first emitting module that is opposite the optical layer. The invention also relates to a method for manufacturing such a hybrid semiconductor laser component.

Hybrid semiconductor laser component and method for manufacturing such a component

A method for producing optoelectronic devices, including the following successive steps: providing a substrate having a first face; on the first face, forming sets of light-emitting diodes including wire-like, conical or frustoconical semiconductor elements; covering all of the first face with a layer encapsulating the light-emitting diodes; forming a conductive element that is insulated from the substrate and extends through the substrate from the second face to at least the first face; reducing the thickness of the substrate; and cutting the resulting structure in order to separate each set of light-emitting diodes.

Method for producing optoelectronic devices comprising light-emitting diodes

This method of fabricating a modulator comprises:

Method of fabricating a modulator of the propagation losses and of the index of propagation of an optical signal

A method of fabricating a modulator of propagation losses and of index of propagation of an optical signal, including: following bonding of a substrate onto an encapsulated semiconductor layer including a first electrode of the modulator and prior to forming a second electrode of the modulator, the method includes: removing a base substrate onto which the encapsulated semiconductor layer is deposited to expose a face of a buried layer of dielectric material, situated under the buried semiconductor layer, without modifying thickness of the buried layer by more than 5 nm; and forming the second electrode is implemented directly on this exposed face of the buried layer such that, once the second electrode has been formed, it is the buried layer which directly forms a dielectric layer interposed between proximal ends of the electrodes of the modulator.

The disclosure relates to a method of manufacturing vibratory elements, comprising forming on a substrate a multilayer structure by an integrated circuit manufacturing method, the multilayer structure comprising an element susceptible of vibrating when it is subjected to an electrical signal, and electrodes for transmitting an electrical signal to the vibratory element, the vibratory element comprising a mechanical coupling face that is able to transmit to control element vibrations perceptible by a user.

Method of manufacturing a vibratory actuator for a touch panel with haptic feedback

The disclosure relates to a method for controlling an object configured to be handheld and including vibratory actuators. The method including mechanically coupling a first group of at least one vibratory actuator to a first part of the object, mechanically coupling a second group of at least one vibratory actuator to a second part of the object, the first and the second parts being configured to be able to vibrate independently of each other, and to come into contact with different areas of the hand of the user holding the object, and transmitting to each group of actuators, an electrical signal having a frequency adapted to the resonance frequency of the part to which it is mechanically coupled.

Method of controlling a handheld object using haptic feedback

A method for protecting a circuit component on a semiconductor substrate from a plasma etching or other removal process includes forming a screening layer over an auxiliary layer to conceal at least an area of the auxiliary layer that overlays at least a portion of the circuit component, such as for example a high-ohmic poly resistor. The method transfers a pattern defined by a mask onto the screening layer by selectively removing portions of the screening layer in accordance with the pattern. Portions of the auxiliary layer that are not protected by the screening layer are removed using a plasma gas selective to the auxiliary layer material, without removing the area of the auxiliary layer that overlays the portion of the circuit component, thereby protecting the circuit component from the plasma gas via the screening layer and auxiliary layer.

Method for manufacturing high-stability resistors, such as high ohmic poly resistors, integrated on a semiconductor substrate

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Saint Egreve, France

Olivier Girard