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Olivier Gerard Marc Vatel

Karl Emerson Mautz

Ralf Zedlitz

Iraj Eric Shahvandi

Terry Alan Breeden

Michael Thomas Tucker

In a CVD chamber ( ) having a chuck ( ) to hold a semiconductor substrate ( ) and having a plasma generator ( ) to generate a plasma ( ), a trench in the substrate is filled with dielectric material from ions ( ) of the plasma. The ions are forced to move in a direction ( ) that is substantially perpendicular to the surface of the substrate by a pulsed unidirectional voltage between the plasma generator and the substrate, by a circular magnetic field, or by a combination of both fields.

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Round Rock, TX, United States of America

Olivier Gerard Marc Vatel