Centre National De La Recherche Scientifique

Olivier Causse

Jean-Louis Sanchez

Jean Jalade

Jean-Pierre Laur

Patrick Austin

Marie Breil

The invention concerns an anode voltage sensor of a vertical power component selected from the group consisting of components called thyristor, MOS, IGBT, PMCT, EST, BRT transistor, MOS thyristor, turn-off MOS thyristor, formed by a lightly doped N-type substrate ( ) whereof the rear surface ( ) having a metallizing coat corresponds to the component anode. Said sensor comprises, on the front surface side, a substrate zone ( ) surrounded at least partly by a P-type region with low potential in front of an anode potential, said zone ( ) being coated with a metallizing coat (M) in ohmic contact with it, whereon is provided an image of the anode voltage.

Anode voltage sensor of a vertical power component and use for protecting against short circuits

A peripheral structure for a monolithic power device, preferably planar, includes front and rear surfaces, connected respectively to a cathode and an anode, two junctions respectively reverse-biased and forward-biased when a direct and adjacent voltage is respectively applied to the two surfaces and at least an insulating box connecting the front and rear surfaces. The structure is such that when a direct voltage or a reverse voltage is applied, generating equipotential voltage lines, the insulating box enables to distribute the equipotential lines in the substrate.

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Onet le Chateau, France

Olivier Causse