Centre National De La Recherche Scientifique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Université Paris-Saclay

Olivier Boulle

Gilles Louis Gaudin

Ioan Mihai Miron

Jean-Pierre Nozieres

Dafine Ravelosona

Safeer Chenattukuzhiyil

Safeer Chenattukuz Hiyil

Gilles Gaudin

The invention relates to a magnetic memory cell (), comprising: a stack () including a magnetic layer section () between a conductive layer section () and a section () of a layer that is different from the conductive layer, the magnetic layer having a magnetisation () perpendicular to the plane of the layers; a metallisation section () on which the stack is placed; and first, second, third and fourth metallisation arms (D toG), each arm having a median axis (D toG), wherein, for each arm, a current flowing towards the stack in the direction of the median axis sees that portion of the stack which is closest the arm mostly on its left for the first and second arms (E,G), and mostly on its right for the third and fourth arms (D,F).

Magnetic memory cell

A magnetic memory element includes a contact with a magnetic layer portion between a conductive layer portion and a non-magnetic layer portion. The magnetic layer has a magnetization perpendicular to the plane of the layers, and an angled conductive track-having a central portion extended by two arms, the contact being entirely arranged on the track. For each arm, a current flowing towards the contact along the median axis of the arm encounters the portion of the contact nearest to the arm primarily on the left thereof for one of the arms, and primarily on the right thereof for the other arm.

Magnetic memory element

A memory slot including a pad formed of a stack of regions made of thin layers, including a first region made of a nonmagnetic conducting material; a second region made of a magnetic material exhibiting a magnetization in a direction perpendicular to the principal plane of the pad; a third region made of a nonmagnetic conducting material of different characteristics to those of the first region; the pad resting on a conducting track adapted to cause the flow of a programming current of chosen sense, in which the pad has an asymmetric shape with respect to any plane perpendicular to the plane of the layers and parallel to the central axis of the track, and with respect to its barycenter.

Magnetic memory cell with asymmetrical geometry programmable by application of current in the absence of a magnetic field

Growing community of inventors

Grenoble, France

Olivier Boulle