Soitec

Olivier Bonnin

Jean-Marc Bethoux

David Sotta

Olivier Ledoux

Morgane Logiou

Raphaël Caulmilone

A method for manufacturing a plurality of crystalline semiconductor islands having a variety of lattice parameters comprises providing a substrate including a medium, a flow layer disposed on the medium, and a plurality of strained crystalline semiconductor islands having an initial lattice parameter arranged on the flow layer. The strained semiconductor islands are selectively treated so as to form a first group of strained islands having a first lateral expansion potential, and a second group of strained islands having a second lateral expansion potential that is different from the first lateral expansion potential. The substrate is heat treated at a temperature at or above a glass transition temperature of the flow layer to cause differentiated relaxation of the islands of the first and second groups, such that a lattice parameter of the first group of relaxed islands differs from a lattice parameter of the second group of relaxed islands.

Growth substrate for forming optoelectronic devices, method for manufacturing such a substrate, and use of the susbstrate, in particular in the field of micro-display screens

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Bresson, France

Olivier Bonnin