Carl Zeiss Smt Gmbh

Oliver Jaeckel

Dirk Seidel

Carola Blaesing-Bangert

Sven Martin

Stephan Zschaeck

Uwe Horn

Thomas Kutzner

A device for measuring a substrate for semiconductor lithography with a reference interferometer for ascertaining the change in the ambient conditions, wherein the reference interferometer comprises a means for changing the optical path length of a measurement section of the reference interferometer, and a method for correcting cyclic error components in the reference interferometer using same.

Device for measuring a substrate and method for correcting cyclic error components of an interferometer

A method for measuring a substrate for semiconductor lithography using a measuring device, wherein the measuring device comprises a recording device for capturing at least a partial region of the substrate and, wherein the distance between the substrate and an imaging optical unit of the recording device is varied while the partial region is captured by the recording device.

Method for measuring a substrate for semiconductor lithography

The invention relates to a method for capturing and compensating the influence of ambient conditions on an imaging scale (S) in a measuring microscope. Here, a modification of the optical properties in the measuring microscope that is caused by a change in the ambient conditions is measured by use of a reference measurement system, in particular an etalon, and, at the same time, an image of a reference structure with at least one reference length (L) that is situated on a calibration mask is produced by use of a detector of the measuring microscope and a change (&#x394;L) of the reference length (L) that is caused by the change in the ambient conditions is determined in the image of the reference structure. Subsequently, a correlation is established between the modification of the optical properties of the reference measurement system and the length change (&#x394;L) in the image, produced in the detector, of the reference structure of the calibration mask. This correlation can be used to carry out a computational adaptation of the size of picture elements of the detector and thus compensate the influence of ambient conditions on the imaging scale (S) of the measuring microscope.

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Jena, Germany

Oliver Jaeckel