Epcos Ag

At&s Austria Technologie & Systemtechnik Aktiengesellschaft

Tdk Electroncis Ag

Epcoa Ag

Siemens Aktiengesellschaft

Tdk Electronics Ag

Oliver Dernovsek

Thomas Feichtinger

Franz Rinner

Wolfram Wersing

Alexander Glazunov

Sebastian Brunner

Klaus-Dieter Aichholzer

Axel Pecina

Christian Vockenberger

Bernhard Döllgast

Georg Kuegerl

Georg Kügerl

Bernhard Doellgast

Christian Faistauer

Georg Krenn

Roman Karmazin

Michael Stahl

Jutta Koholka

The present invention relates to a carrier () with a passive cooling function for a semiconductor component (), having a main body () with a top side () and a bottom side () and at least one electrical component () that is embedded in the main body (), wherein the carrier () has a first thermal via (), which extends from the top side () of the main body () to the at least one electrical component (), wherein the carrier () has a second thermal via (), which extends from the at least one electrical component () to the bottom side () of the main body (), and wherein the at least one embedded electrical component () is electrically contacted by the first and the second thermal via ().

Carrier with a passive cooling function for a semiconductor component

What is specified is an electronic component () comprising a functional body () provided with a reflection structure () wherein the reflection structure () is arranged and designed to reflect radiation that impinges on the electronic component () from outside away from the functional body () and wherein the electronic component () is radiation-passive.

Electronic component and use thereof

A light-emitting diode device is specified, comprising at least one carrier and a light-emitting diode arranged thereon. The carrier comprises a plurality of polymer layers arranged one above another. At least one polymer layer has a cutout, in which an electrical component is embedded.

Light-emitting diode device

A method for producing a multi-layer varistor component is specified. A main body for the multi-layer varistor component includes a plurality of internal electrodes. The method further includes providing the main body with a starting material for a copper electrode layer in such a way that the starting material is directly connected to at least one internal electrode. A thermal treatment of the starting material is performed under a protective gas atmosphere in order to form the copper electrode layer.

Method for producing a multi-layer varistor component and a multi-layer varistor component

A piezoelectric multilayer component having a stack of sintered piezoelectric layers and inner electrodes arranged between the piezoelectric layers. A region which has poling cracks is present on the surface of at least one electrode, and the poling cracks are separated from a surface of at least one of the inner electrodes by the region having the poling cracks.

Method for producing a piezoelectric multilayer component and a piezoelectric multilayer component

An electronic component has a main body. The main body includes a porous material having surface pores at a surface of the main body. A passivation liquid is arranged in the surface pores. A method of forming an electronic component is also disclosed as is a method of passivating a body.

Electronic component and method for the passivation thereof

A light-emitting diode device includes a carrier having at least one cavity, a light-emitting diode chip is arranged in a manner at least partly recessed in the at least one cavity, and an ESD protection element, which is formed by a partial region of the carrier. Furthermore, a light-emitting diode device includes a carrier having at least one cavity, a light-emitting diode chip arranged on the carrier, and an electrical component arranged at least partly recessed in the at least one cavity. Furthermore, the light-emitting diode device includes an ESD protection element, which is formed by a partial region of the carrier.

A method for producing a piezoelectric multilayer component is disclosed. Piezoelectric green films and electrode material are provided, arranged alternately on top of one another and sintered. The electrode material is provided with a PbO-containing coating and/or PbO is mixed into the electrode material.

A light-emitting diode device has a first carrier and at least one light-emitting diode chip, which is arranged on the first carrier. The first carrier has at least one first and one second carrier part, wherein the light-emitting diode chip rests only on the first carrier part. Furthermore, the first and second carrier parts each have a thermal conductivity. The thermal conductivity of the first carrier part is at least 1.5 times the thermal conductivity of the second carrier part. The first carrier part is surrounded laterally by the second carrier part.

An ESD protection component includes a ceramic material and a BGA or LGA termination. In addition, an ESD protection component includes a basic body with a lower side. The basic body includes a ceramic material. At least one floating inner electrode is located at a distance from the lower side of two to 100 ceramic grains. Also a component includes a carrier, on which an LED and an ESD protection component are arranged.

ESD protection component and component comprising an ESD protection component and an LED

A piezo electrical component has a stack of piezo electrical layers arranged over each other and electrode layers arranged therebetween. The stack has at least one first piezo electrical layer having a first piezo electrical charge constant and, directly adjacent thereto, at least one second piezo electrical layer having a second piezo electrical charge constant. The piezo electrical charge constant describes an expansion of the piezo electrical layer perpendicular to an electrical field at a voltage 6 applied to the electrode layers. The first piezo electrical charge constant is different from the second piezo electrical charge constant.

Piezoelectric component

A piezoelectric multilayer component includes a stack of sintered piezoelectric layers and inner electrodes that are arranged there between. A piezoelectric layer includes at least one piezoelectric film. At least one of the piezoelectric films is designed as a weakening film, wherein the thickness of the weakening film is substantially smaller than the thickness of at least one of the other piezoelectric films.

Piezoelectric multilayer component

A piezoelectric component includes a stack of piezoelectric layers arranged one on top of the other and first and second electrode layers arranged therebetween. The stack includes at least one first piezoelectric layer having a first electrical coercive force and directly adjacent thereto at least one second piezoelectric layer having a second electrical coercive force different from the first coercive force.

A piezoelectric multilayer component has a stack of green piezoceramic layers arranged one on top of the other. A first electrode layer is applied onto a piezoceramic layer and contains a first metal. A structured sacrificial layer is applied onto a further piezoceramic layer, adjacent to the first electrode layer in the stacking direction, and contains a higher concentration of the first metal than does the first electrode layer. When the intermediate product is sintered, the first metal diffuses from the structured sacrificial layer to the first electrode layer and in the process leaves cavities which form a weak layer.

A piezoelectric multilayer component includes a stack of piezoceramic layers, which are arranged one on top of the other, and electrode layers. The stack has a first area and a second area. The second area contains a disturbance material, which is used to make the second area less mechanically robust than the first area.

Growing community of inventors

Lieboch, Austria

Oliver Dernovsek