Lam Research Corporation

Oliver Design, Inc.

Other

Oliver David Jones

Donald Edgar Stephens

David T Frost

Scott T Petersen

Yassin Mehmandoust

Jonathan E Borkowski

James M Olivas

Kenneth C McMahon

John Gerard Dewit

Hugo John Miller, Iii

Anthony Cramer Jones

Bryan R Riley

Mike Wallis

Jim Vail

A system and methods for substrate preparation are provided. In one example, a wafer processing system includes a system enclosure that contains wafer processing apparatus within an isolated wafer processing environment. The wafer processing apparatus include a pair of immersion tanks in the lower front region of the system with a pair of wafer pickers behind the immersion tanks to extract wafers from the tanks. In the rear of the system, a pair of brush boxes are located in a lower region with a pair of dryer units positioned above the brush boxes. A robot arm is positioned between the pair of immersion tanks and the pair of brush boxes in a middle region of the system, and is configured to transition wafers between the processing apparatus. A pair of output shelves holding output cassettes is positioned over the immersion tanks. The output cassettes receive clean wafers after processing.

Integrated substrate processing system

A cascaded disk scrubbing system and method are provided. The cascaded disk scrubbing system includes an array of rows of brush pairs. Each row includes a plurality of counter-rotating brush pairs that are arranged horizontally and longitudinally, and configured to receive and process a disk in a vertical orientation through disk preparation zones defined by each pair of brushes. Below and between the pairs of brushes is a track that is configured to apply a rotation to the disk and to transition the disk in a vertical orientation through the brush pairs. Nozzles dispense fluids on and over the brush pairs, and the brush pairs are configured such that fluids are dispensed through the brush pairs. Nozzles dispense a curtain of fluid between each disk preparation zone, and the cascaded disk scrubbing system is configured to progress from dirtiest to cleanest as the disk transitions through each disk preparation zone.

Disk cascade scrubber

Methods for preparing semiconductor wafers are provided. A method includes disposing a pair of wafer preparation assemblies in an opposing relationship in an enclosure. Each of the wafer preparation assemblies having a first wafer preparation member and a second wafer preparation member. The method includes disposing a semiconductor wafer between the wafer preparation assemblies in a vertical orientation and rotating the wafer. The method also includes orienting the wafer preparation assemblies such that the first wafer preparation members contact opposing surfaces of the rotating wafer in an opposing relationship, and orienting the wafer preparation assemblies such that the second wafer preparation members contact opposing surfaces of the rotating wafer in an opposing relationship.

Method for performing two wafer preparation operations on vertically oriented semiconductor wafer in single enclosure

Liquid is removed from wafers for drying a wafer that has been wet in a liquid bath. The wafer and the bath are separated at a controlled rate as the wafer is positioned in a gas-filled volume. The controlled rate is generally not less than the maximum rate at which a meniscus will form between the liquid bath and the surface of the wafer when the liquid bath and the wafer are separated. The gas-filled volume is defined by a hot chamber that continuously transfers thermal energy to the wafer in the gas-filled volume. Hot gas directed into the volume and across the wafer and out of the volume continuously transfers thermal energy to the wafer.

Wafer drying apparatus and method

A cascaded wafer scrubbing system and method are provided. The cascaded wafer scrubbing system includes an array of rows of brush pairs. Each row includes a plurality of counter-rotating brush pairs that are arranged horizontally and longitudinally, and configured to receive and process a wafer in a vertical orientation through wafer preparation zones defined by each pair of brushes. Below and between the pairs of brushes is a track that is configured to apply a rotation to the wafer and to transition the wafer in a vertical orientation through the brush pairs. Nozzles dispense fluids on and over the brush pairs, and the brush pairs are configured such that fluids are dispensed through the brush pairs. Nozzles dispense a curtain of fluid between each wafer preparation zone, and the cascaded wafer scrubbing system is configured to progress from dirtiest to cleanest as the wafer transitions through each wafer preparation zone.

Wafer cascade scrubber

Wafer preparation systems and methods for wafer preparation are provided. The wafer preparation system includes a scrubber unit and a dryer unit arranged vertically with the dryer unit above the scrubber unit. The scrubber unit is configured to receive a wafer for mechanical scrub cleaning, and the dryer unit is configured to receive the wafer from the scrubber unit for drying after the mechanical scrub cleaning. The cleaning and the drying are accomplished with the wafer in a vertical orientation. An edge holder attached to a lifter rod lifts the wafer through the scrubber unit to the dryer unit. The method for wafer preparation includes receiving a wafer in a scrubbing station and lifting the wafer internally from the scrubbing station to the drying station that is located above the scrubbing station in a vertical arrangement.

Wafer preparation systems and methods for preparing wafers

Liquid is removed from batches of substrates by apparatus and methods for drying substrates that have been wet in an elongated liquid bath. The substrates are moved relative to the bath and an elongated gas-filled volume at rates of movement selected according to the location of the batches of substrates in the bath or the volume. As an example, the substrates and the bath are separated at a controlled rate to form a thin layer of liquid on each substrate as each substrate enters the gas-filled volume. The gas-filled volume is defined by an elongated hot chamber and hot gas directed into the volume and across the substrates and out of the volume continuously transfers thermal energy to the substrates . The flow rate of the gas into the volume is related to introduction of the substrates into the bath to avoid disturbing the liquid in the bath. The thermal energy transferred to the substrates in the volume evaporates the thin layer from the substrates without decreasing the rate of separation of the substrates and the bath below the maximum rate of such separation at which a meniscus will form between the bath and the surface of one of the substrates during such separation. Relative humidity in the volume is controlled by sensing the relative humidity and regulating the speed of a fan that draws gas from the volume.

Apparatus for drying batches of disks

Methods for preparing semiconductor wafers are disclosed. A method includes rotating a semiconductor wafer in a vertical orientation, and the wafer having first and second opposing surfaces. The method further includes contacting each of the first and second opposing surfaces of the wafer with a cylindrical wafer preparation member so as to define a substantially linear contact area. The cylindrical wafer preparation members are disposed in an opposing relationship such that the contact areas are defined at corresponding locations on the first and second opposing surfaces. Then, the method includes controlling at least one wafer preparation parameter to obtain a variable wafer material removal rate as the contact areas defined on the first and second opposing surfaces are moved from a first position to a second position. The variable wafer material removal rate being formulated to provide the wafer with a substantially uniform thickness.

Off-diameter method for preparing semiconductor wafers

A system and methods for substrate preparation are provided. In one example, a wafer processing system includes a system enclosure that contains wafer processing apparatus within an isolated wafer processing environment. The wafer processing apparatus include a pair of immersion tanks in the lower front region of the system with a pair of wafer pickers behind the immersion tanks to extract wafers from the tanks. In the rear of the system, a pair of brush boxes are located in a lower region with a pair of dryer units positioned above the brush boxes. A robot arm is positioned between the pair of immersion tanks and the pair of brush boxes in a middle region of the system, and is configured to transition wafers between the processing apparatus. A pair of output shelves holding output cassettes is positioned over the immersion tanks. The output cassettes receive clean wafers after processing. In another example, a method for preparing a substrate is provided. The method includes the batch processing of substrates through substrate processing apparatus arranged within a substrate processing system.

Substrate processing in an immersion, scrub and dry system

Liquid is removed from disks by apparatus and methods for drying a disk that has been wet in a liquid bath. The disk and the bath are separated at a controlled rate to form a monolayer of liquid on the disk as the disk is positioned in a gas-filled volume. The separation may be by moving the disk out of the liquid bath, and the controlled rate is generally not less than the maximum rate at which a meniscus will form between the liquid bath and the surface of the disk when the liquid bath and the disk are separated. The gas-filled volume is defined by a hot chamber that continuously transfers thermal energy to the disk in the gas-filled volume. Hot gas directed into the volume and across the disk and out of the volume continuously transfers thermal energy to the disk. The directing of the gas out of the volume is independent of the separation of the bath and the disk. The thermal energy transferred to the disk in the volume evaporates the monolayer from the disk without decreasing the rate of separation of the disk and the bath below the maximum rate of such separation at which a meniscus will form between the bath and the surface of the disk during such separation. In addition to such separation, and directing of the hot gas across the disk and out of the volume, the relative humidity in the volume is kept low to inhibit recondensation of the liquid on the disks.

Disk drying apparatus and method

A substrate polishing system includes two hollow drums and motors for driving the drums in a reciprocating manner. An abrasive tape wound on supply and takeup rollers is introduced, with the supply roller mounted inside one of the drums and the takeup roller mounted inside the other drum. The abrasive tape exits the interior of each drum through a slot in the surface of the drum. Between the drums the abrasive tape passes over a platen having a bearing surface. A substrate is mounted in a carrier and forced against the abrasive tape where it overlies the bearing surface. The drums are rotated reciprocally, thereby causing the abrasive tape to move back and forth over the platen and polishing the substrate. After a substrate has been polished the tape is advanced a selected distance by indexing motors that are connected to the supply and takeup rollers. After several substrates have been polished, each successive substrate is exposed to a section of the abrasive tape that has experienced the same amount of wear. Thus the uniformity of polishing between substrates is improved. Also, the use of the drums allows the tape to reach a desired speed in order to polish the substrate in a minimal period of time. Abrasive tape conditioners are positioned on the sides of the carrier. Because the tape moves back and forth under the conditioners, rather than only in a single direction, the cleaning of the tape is improved. In an alternative embodiment the tape is not abrasive and instead an abrasive slurry is applied to the tape.

Substrate polishing system using roll-to-roll fixed abrasive

Liquid is removed from batches of substrates by apparatus and methods for drying substrates that have been wet in an elongated liquid bath. The substrates are moved relative to the bath and an elongated gas-filled volume at rates of movement selected according to the location of the batches of substrates in the bath or the volume. As an example, the substrates and the bath are separated at a controlled rate to form a thin layer of liquid on each substrate as each substrate enters the gas-filled volume. The gas-filled volume is defined by an elongated hot chamber and hot gas directed into the volume and across the substrates and out of the volume continuously transfers thermal energy to the substrates. The flow rate of the gas into the volume is related to introduction of the substrates into the bath to avoid disturbing the liquid in the bath. The thermal energy transferred to the substrates in the volume evaporates the thin layer from the substrates without decreasing the rate of separation of the substrates and the bath below the maximum rate of such separation at which a meniscus will form between the bath and the surface of one of the substrates during such separation. Relative humidity in the volume is controlled by sensing the relative humidity and regulating the speed of a fan that draws gas from the volume.

Apparatus for drying batches of wafers

A self-aligning mandrel assembly is provided. The assembly includes a cylindrical inner core and a fulcrum disposed on an outer surface of the cylindrical inner core. A mandrel shell surrounds the cylindrical inner core. The mandrel shell has a wafer preparation material affixed to an outer surface thereof, and the mandrel shell is pivotably supported by the fulcrum such that the mandrel shell aligns with a surface of a substrate when the wafer preparation material contacts the surface of the substrate.

Self-aligning cylindrical mandrel assembly and wafer preparation apparatus including the same

An apparatus for preparing a semiconductor wafer is provided. The apparatus includes a wafer drive assembly having a pair of wafer drive rollers for rotating a semiconductor wafer in a vertical orientation. The wafer drive assembly is configured such that the wafer drive rollers are controllably movable from a first position to a second position. Also provided as part of the apparatus is a pair of wafer preparation assemblies movably disposed in an opposing relationship above the wafer drive assembly. Each of the wafer preparation assemblies has a first wafer preparation member and a second wafer preparation member. The wafer preparation assemblies being movable into a first position in which each of the first wafer preparation members is position to perform a first wafer preparation operation on the wafer and into a second position in which each of the second wafer preparation members is positioned to perform a second wafer preparation operation on the wafer.

Wafer preparation apparatus including variable height wafer drive assembly

An apparatus for cleaning a wafer oriented vertically is provided. The apparatus includes a first brush and a second brush located horizontally from the first brush. During use, a wafer is oriented vertically the first and second brushes. The brushes are brought into contact with the wafer and rotated thereby engaging the wafer with rollers. By rotating the rollers, the wafer is also rotated. Liquid is sprayed towards the brushes and wafer. By orienting the wafer vertically, liquid and particulates contained therein readily fall from the water due to gravity. This is particularly advantageous when cleaning larger diameter wafers in which particulates must be removed from a larger wafer surface area.

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Watsonville, CA, United States of America

Oliver David Jones