Imec Vzw

Katholieke Universiteit Leuven, Ku Leuven R&d

Olga Syshchyk

Luc Haspeslagh

Bernardette Kunert

Robert Langer

Philippe Soussan

Vasyl Motsnyi

Stefano Guerrieri

The present invent provides a method comprising forming a first wafer comprising a first substrate of a group IV semiconductor, and a group III-V semiconductor device structure formed by selective area epitaxial growth on a surface portion of a front side of the first substrate. The method further comprises forming a second wafer comprising a second substrate of a group IV semiconductor, and a group IV semiconductor device structure formed on a front side of the second substrate, and bonding the first wafer to the second wafer with the front side of the first substrate facing the front side of the second wafer.

Method of forming a semiconductor device structure

Growing community of inventors

Leuven, Belgium

Olga Syshchyk