Infineon Technologies Ag

Von Ardenne Gmbh

Olga Khvostikova

Thoralf Kautzsch

Heiko Froehlich

Mirko Vogt

Maik Stegemann

Henning Feick

Stefano Parascandola

Andre Roeth

Marten Oldsen

Thomas Popp

Marco Haubold

Bernhard Straub

Georg Haasemann

A method of generating a germanium structure includes performing an epitaxial depositing process on an assembly of a silicon substrate and an oxide layer, wherein one or more trenches in the oxide layer expose surface portions of the silicon substrate. The epitaxial depositing process includes depositing germanium onto the assembly during a first phase, performing an etch process during a second phase following the first phase in order to remove germanium from the oxide layer, and repeating the first and second phases. A germanium crystal is grown in the trench or trenches. An optical device includes a light-incidence surface formed by a raw textured surface of a germanium structure obtained by an epitaxial depositing process without processing the surface of the germanium structure after the epitaxial process.

Method of generating a germanium structure and optical device comprising a germanium structure

In accordance with an embodiment, a method for producing a moisture sensor includes providing a substrate arrangement, applying a sensor structure, applying a first cover layer on the sensor structure, locally removing the planar cover layer arrangement to expose portions of an insulation layer, applying a third cover layer on the exposed portions of the insulation layer, exposing the planar cover layer arrangement covering the sensor structure, and applying a moisture-absorbing layer element on the planar cover layer arrangement covering the sensor structure to obtain the moisture sensor.

Method for producing a moisture sensor at the wafer level and moisture sensor

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Dresden, Germany

Olga Khvostikova