Sandia Corporation

Lockheed Martin Corporation

Olga B Spahn

William P Kornrumpf

Rick C Stevens

Joseph Alfred Iannotti

Kevin J Thorson

Glenn A Forman

Ernest J Garcia

Charles T Sullivan

Charles John Kryzak

Kevin L Lear

Brian Scott Leininger

William D Cowan

Daryl J Dagel

The present disclosure includes apparatus, system, and method embodiments that provide micro electro mechanical system optical switching and methods of manufacturing switches. For example, one optical switch embodiment includes at least one micro electro mechanical system type pivot mirror structure disposed along a path of an optical signal, the structure having a mirror and an actuator, and the mirror having a pivot axis along a first edge and having a second edge rotatable with respect to the pivot axis, the mirror being capable of and arranged to be actuated to pivot between a position parallel to a plane of an optical signal and a position substantially normal to the plane of the optical signal.

Micro electro mechanical system optical switching

An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

Compound semiconductor optical waveguide switch

A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g. Al.sub.2 O.sub.3), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3-1.6 .mu.m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation.

Semiconductor structures having electrically insulating and conducting

Growing community of inventors

Albuquerque, NM, United States of America

Olga B Spahn