Carnegie Institution of Washington

Oleksandr O Kurakevych

Timothy A Strobel

Duck Young Kim

The invention relates to a new phase of silicon, Si, and a method of making the same. Sihas a quasi-direct band gap, with a direct gap value of 1.34 eV and an indirect gap value of 1.3 eV. The invention also relates to a compound of the formula NaSiand a method of making the same. NaSimay be used as a precursor to make Si.

Form of silicon and method of making the same

The invention relates to a new phase of silicon, Si, and a method of making the same. Sihas a quasi-direct band gap, with a direct gap value of 1.34 eV and an indirect gap value of 1.3 eV. The invention also relates to a compound of the formula NaSiand a method of making the same. N4Simay be used as a precursor to make Si.

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Washington, DC, United States of America

Oleksandr O Kurakevych