Sandisk Technologies Inc.

Pohang University of Science and Technology Foundation

Oleksandr Mosendz

Raghuveer S Makala

Bruce David Terris

Goran Mihajlovic

James W Reiner

Jangseop Lee

Hyunsang Hwang

John Read

A memory device includes a memory material portion, and an ovonic threshold switch selector element. The ovonic threshold switch selector element includes a first carbon-containing electrode comprising carbon and a metal, a second carbon-containing electrode comprising the carbon and the metal, and an ovonic threshold switch material portion located between the first electrode and the second electrode.

Ovonic threshold switch selectors with electrodes including carbon and metal

A method includes forming a first electrode layer over a substrate, forming an ovonic threshold switch (OTS) material layer over the first electrode layer, microwave annealing the OTS material layer, and forming a second electrode layer over the OTS material layer.

Method of making ovonic threshold switch selectors using microwave annealing

A perpendicular spin orbit torque MRAM memory cell comprises a magnetic tunnel junction that includes a free layer in a plane, a ferromagnetic layer and a spacer layer between the ferromagnetic layer and the free layer. The free layer comprises a switchable direction of magnetization perpendicular to the plane. The ferromagnetic layer is configured to generate perpendicularly polarized spin current in response to an electrical current through the ferromagnetic layer and inject the perpendicularly polarized spin current through the spacer layer into the free layer to change the direction of magnetization of the free layer.

Perpendicular SOT-MRAM memory cell using spin swapping induced spin current

Growing community of inventors

Campbell, CA, United States of America

Oleksandr Mosendz