Ostendo Technologies, Inc.

Technologies and Devices International, Inc.

Technologies and Devices, Inc.

Oleg V Kovalenkov

Alexander L Syrkin

Vladimir Ivantsov

Alexander Usikov

Vladimir A Dmitriev

Vitali Soukhoveev

Lisa Shapovalov

Vladimir Sizov

Anna Volkova

Hussein S El-Ghoroury

Yuri V Melnik

Robert G W Brown

Denis V Tsvetkov

Philippe Spiberg

Lisa Shapovalova

Aleksei Pechnikov

Aleksandr Usikov

Robert Brown

Alexander Syrkin

A backflow liner in an epitaxial growth system is provided in order to control gas flow and protect the surface of substrates throughout an epitaxial growth cycle. The backflow liner provides critical protection during the warming time prior to substrate pre-treatment, while the growth environment reaches steady state condition between the pre-treatment and the growth process, during pauses between the layer depositions in case of multilayer structure growth, and during the cooling process. The direction of the gas flow through the backflow liner is counter to the deposition gas flows directed from the source end of the growth system. The backflow liner is therefore designed to shape the flow of gases to prevent formation of the vortex-type streams in the growth system that may negatively affect the growth process.

Backflow reactor liner for protection of growth surfaces and for balancing flow in the growth liner

Apparatus and methods for controlling gas flows in a HVPE reactor. Gas flows may be controlled by a gas focusing element. Gas injection and gas collection tubes are positioned within an outer tube and are separated from each other to define a space there between. A gas, such as HCl gas, flows over the outer surfaces of the injection and collection tubes to contain gases within the space as they flow from the injection tube to the collection tube and over a seed upon which group III nitride materials are grown. Gas flows may also be controlled by a multi-tube structure that separates gases until they reach a grown zone. A multi-tube structure may include four tubes, which separate flows of a halide reactive gas, a reaction product that flows with a carrier gas, and ammonia.

Apparatus and methods for controlling gas flows in a HVPE reactor

A method to grow single phase group III-nitride articles including films, templates, free-standing substrates, and bulk crystals grown in semi-polar and non-polar orientations is disclosed. One or more steps in the growth process includes the use of additional free hydrogen chloride to eliminate undesirable phases, reduce surface roughness, and increase crystalline quality. The invention is particularly well-suited to the production of single crystal (11.2) GaN articles that have particular use in visible light emitting devices.

Free HCL used during pretreatment and AlGaN growth to control growth layer orientation and inclusions

The geometry of transition from cylindrical to rectangular shape through the conical part in hydride vapor phase epitaxial (HVPE) systems for deposition of III-nitride films is disclosed. It is used to ensure the laminar gas flow inside the growth zone of the system. For the velocity of flow within the atmospheric pressure reactor to be sufficient, the precursors are injected through the narrow diameter tubing injectors. The quartz reactor geometry is introduced to control the transition from jet to laminar flow.

Epitaxy reactor internal component geometries for the growth of superior quality group III-nitride materials

A method of growing planar non-polar m-plane or semi-polar III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in an atmosphere of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the intermediate layer using HVPE.

Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE)

HVPE reactors and methods for growth of p-type group III nitride materials including p-GaN. A reaction product such as gallium chloride is delivered to a growth zone inside of a HVPE reactor by a carrier gas such as Argon. The gallium chloride reacts with a reactive gas such as ammonia in the growth zone in the presence of a magnesium-containing gas to grow p-type group III nitride materials. The source of magnesium is an external, non-metallic compound source such as Cp2Mg.

HVPE apparatus and methods for growth of p-type single crystal group III nitride materials

Hydride phase vapor epitaxy (HVPE) growth apparatus, methods and materials and structures grown thereby. A HVPE growth apparatus includes generation, accumulation and growth zones. A first reactive gas reacts with an indium source inside the generation zone to produce a first gas product having an indium-containing compound. The first gas product is transported to the accumulation zone where it cools and condenses into a source material having an indium-containing compound. The source material is collected in the accumulation zone and evaporated. Vapor or gas resulting from evaporation of the source material forms reacts with a second reactive gas in the growth zone for growth of ternary and quaternary materials including indium gallium nitride, indium aluminum nitride, and indium gallium aluminum nitride.

HVPE apparatus and methods for growth of indium containing materials and materials and structures grown thereby

A method for fabricating semiconductor devices with thin (e.g., submicron) and/or thick (e.g., between 1 micron and 100 microns thick) Group III nitride layers during a single epitaxial run is provided, the layers exhibiting sharp layer-to-layer interfaces. According to one aspect, an HVPE reactor is provided that includes one or more gas inlet tubes adjacent to the growth zone, thus allowing fine control of the delivery of reactive gases to the substrate surface. According to another aspect, an HVPE reactor is provided that includes at least one growth zone as well as a growth interruption zone. According to another aspect, an HVPE reactor is provided that includes extended growth sources such as slow growth rate gallium source with a reduced gallium surface area. According to another aspect, an HVPE reactor is provided that includes multiple sources of the same material, for example Mg, which can be used sequentially to prolong a growth cycle.

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Montgomery Village, MD, United States of America

Oleg V Kovalenkov