Tru-si Technologies, Inc.

Polyremedy, Inc.

Other

Ipec Precision Inc.

Millipore Corporation

Tri-si Technologies, Inc.

Ipec Precison, Inc.

Invensas LLC

Allvia, Inc.

Oleg Siniaguine

Sergey Savastiouk

Alex Berger

Patrick A Halahan

Patrick B Halahan

Sam Kao

Igor Bagriy

Iskander Tokmouline

Bosco Lan

Elena Kachiguina

Michael A Zarowitz

George N Steinberg

Ilya Ravkin

Steven Kaufman

John Jacques

Patrick Halahan

An automatically self-adjusting variable permeability providing (AVPP) layer is provided over and in operative interaction with a wound site containing a wound to the integumentary system of a living creature such as the skin of a human patient. The AVPP layer has the capability of automatically changing in respective fluid permeability characteristics provided by respective subregions of the AVPP layer where the changes are in reaction to extant or changed conditions in corresponding micro-zones of the wound site. The automatic self-adjusting behaviors of the respective subregions of the AVPP layer can include providing a faster rate of vapor removal for micro-zones of the wound site that are too wet and providing a slower rate of vapor removal or essentially no vapor removal for micro-zones of the wound site that are too dry.

Self-adaptive and optionally also otherwise adaptable wound dressing

A custom fabricated (e.g. custom shaped and dimensioned) primary wound dressing part that matches a corresponding, pre-mapped integumentary wound is combined with dressing extension parts to form a composite wound dressing system. The primary wound dressing part may include one or more liquid flow barriers composed for example of a hydrophobic and high viscosity liquid embedded in a layer of the primary wound dressing part. The dressing extension parts may include interconnect portals for operatively interconnecting with the primary wound dressing part so that liquids may be securely moved between primary wound dressing part and the extension parts.

Expansion units for attachment to custom patterned wound dressings and custom patterned wound dressings adapted to interface with same

A custom fabricated (e.g. custom shaped and dimensioned) wound dressing that matches a corresponding, pre-mapped integumentary wound includes one or more liquid flow barriers composed for example of a hydrophobic and high viscosity liquid embedded in a layer of the dressing. One such embedded hydrophobic liquid barrier covers a skin section immediately adjacent to the wound opening so as to protect the skin section from harmful liquids such as exudates or water. In one embodiment, the skin protecting barrier is substantially comprised of a silicone oil having a viscosity in the range of about 100 cSt to 1000 cSt.

Custom patterned wound dressings having patterned fluid flow barriers and methods of manufacturing and using same

A multi-layered wound dressing includes a moisture-retaining portion for enhancing the healing of a wound. The wound dressing includes an intermediate layer that has both water soluble and water insoluble fibers. An apparatus that includes a cutting tool and a reservoir of liquid to pre-moisten a portion of the dressing may be used to manufacture the dressings.

Wound dressing and apparatus for forming same

Wound dressings and methods of manufacturing wound dressings are provided. The wound dressings include portions that are converted from a moisture vapor permeable material to a material having reduced moisture vapor permeability. The conversion may be accomplished in a variety of ways. In some embodiments, a solvent is used to dissolve a porous material to thereby form a non-porous film. In other embodiments, heat is applied to melt a porous material to thereby form a non-porous film. The heat may be applied using a heated gas or a heating element to directly or indirectly heat the material.

Wound dressing with controllable permeability

A through hole () is formed in a wafer () comprising a semiconductor substrate (). A seed layer () is sputtered on the bottom surface of the wafer. The seed is not deposited over the through hole's sidewalls adjacent the top surface of the wafer. A conductor () is electroplated into the through hole. In another embodiment, a seed is deposited into an opening in a wafer through a dry film resist mask (). The dry film resist overhangs the edges of the opening, so the seed is not deposited over the opening's sidewalls adjacent the top surface of the wafer. In another embodiment, a dielectric () is formed in an opening in a semiconductor substrate () by a non-conformal physical vapor deposition (PVD) process that deposits the dielectric on the sidewalls but not the bottom of the opening. A seed () is formed on the bottom by electroless plating. A conductor () is electroplated on the seed. In another embodiment, a dielectric () is formed in the opening to cover the entire surface of the opening. A non-conformal layer () is deposited by PVD over the sidewalls but not the bottom of the opening. The dielectric () is etched off the bottom with the non-conformal layer () as a mask. A seed () is formed on the bottom by electroless plating. The non-conformal layer can be formed by electroplating. It can be tantalum deposited by electroplating, then anodized. Other embodiments are also provided.

Electroplating and electroless plating of conductive materials into openings, and structures obtained thereby

Systems using coded particles for multiplexed analysis of biological samples or reagents, in which the codes on the particles are at least partially defined by light-polarizing materials.

Particles with light-polarizing codes

To move an article in and out of plasma during plasma processing, the article is rotated by a first drive around a first axis, and the first drive is itself rotated by a second drive. As a result, the article enters the plasma at different angles for different positions of the first axis. The plasma cross-section at the level at which the plasma contacts the article is asymmetric so that those points on the article that move at a greater linear velocity (due to being farther from the first axis) move longer distances through the plasma. As a result, the plasma processing time becomes more uniform for different points on the article surface. In some embodiments, two shuttles are provided for loading and unloading the plasma processing system. One of the shuttles stands empty waiting to unload the processed articles from the system, while the other shuttle holds unprocessed articles waiting to load them into the system. After the plasma processing terminates, the empty shuttle unloads processed articles from the system, takes the articles away, and gets unloaded and reloaded with unprocessed articles. Meanwhile, the other shuttle loads unprocessed articles into the system and the plasma processing begins. Since the plasma processing system does not wait for the first shuttle, the productivity of the system is increased.

Plasma processing methods and apparatus

A clock distribution network () is formed on a semiconductor interposer () which is a semiconductor integrated circuit. An input terminal () of the clock distribution network is formed on one side of the interposer, and output terminals () of the clock distribution network are formed on the opposite side of the interposer. The interposer has a through hole (), and the clock distribution network includes a conductive feature going through the through hole. The side of the interposer which has the output terminals () is bonded to a second integrated circuit () containing circuitry clocked by the clock distribution network. The other side of the interposer is bonded to a third integrated circuit or a wiring substrate (). The interposer contains a ground structure, or ground structures (), that shield circuitry from the clock distribution network. Conductive lines () in an integrated circuit are formed in trenches () in a semiconductor substrate.

Clock distribution networks and conductive lines in semiconductor integrated circuits

In some embodiments, a circuit structure comprises a semiconductor substrate, an opening passing through the substrate between a first side of the substrate and a second side of the substrate, and a plurality of conductive layers in the opening. In some embodiments, one conductive layer provides an electromagnetic shield that shields the substrate from AC signals carried by a contact pad made from another conductive layer on a backside of the substrate. The conductive layers can also be used to form capacitor/rectifier networks. Manufacturing methods also provided.

Semiconductor structures having multiple conductive layers in an opening, and methods for fabricating same

In some embodiments, a fabrication method comprises: forming a structure that has one or more substrates, wherein the one or more substrates are either a single substrate or a plurality of substrates bonded together, wherein the structure comprises a non-electronically-functioning component which includes at least a portion of the one or more substrates and/or is attached to the one or more substrates; wherein the one or more substrates include a first substrate which has: a first side, an opening in the first side, and a conductor in the opening; wherein the method comprises removing material from the structure so that the conductor becomes exposed on a second side of the first substrate. In some embodiments, the second side is a backside of the first substrate, and the exposed conductor provides backside contact pads. In some embodiments, the fabrication method comprises: forming a structure comprising a first substrate which has: a first side, an opening in the first side, and a conductor in the opening; removing material from the structure so that the conductor becomes exposed on a second side of the first substrate; wherein removing of the material comprises removing the material from a first portion of the second side of the first substrate to cause the first portion to be recessed relative to a second portion of the second side of the first substrate.

Methods of manufacturing devices having substrates with opening passing through the substrates and conductors in the openings

To fabricate contacts on a wafer backside, openings () are formed in the face side of the wafer (). A dielectric layer () and some contact material (), e.g. metal, are deposited into the openings. Then the backside is etched until the contacts (C) are exposed and protrude out. The protruding portion of each contact has an outer sidewall (V). At least a portion of the sidewall is vertical or sloped outwards with respect to the opening when the contact is traced down. The contact is soldered to an another structure (), e.g. a die or a PCB. The solder () reaches and at least partially covers the sidewall portion which is vertical or sloped outwards. The strength of the solder bond is improved as a result. The dielectric layer protrudes around each contact. The protruding portion (P) of the dielectric becomes gradually thinner around each contact in the downward direction. The thinned dielectric is more flexible, and is less likely detach from the contact when the contact is pulled sideways. Other embodiments are also described.

Growing community of inventors

San Carlos, CA, United States of America

Oleg Siniaguine