Soitec

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Oleg Kononchuck

Fabrice Letertre

Didier Landru

Frank Fournel

Ionut Radu

Ludovic Ecarnot

Jean-Marc Bethoux

François Rieutord

Chris Werkhoven

Jean-Michel Hartmann

A heterostructure that includes, successively, a support substrate of a material having an electrical resistivity of less than 10ohm&#xb7;cm and a thermal conductivity of greater than 100 W&#xb7;m&#xb7;K, a bonding layer, a first seed layer of a monocrystalline material of composition AlInGaN, a second seed layer of a monocrystalline material of composition AlInGaN, and an active layer of a monocrystalline material of composition AlInGaN, and being present in a thickness of between 3 and 100 micrometers. The materials of the support substrate, the bonding layer and the first seed layer are refractory at a temperature of greater than 750&#xb0; C., the active layer and second seed layer have a difference in lattice parameter of less than 0.005 &#x212b;, the active layer is crack-free, and the heterostructure has a specific contact resistance between the bonding layer and the first seed layer that is less than or equal to 0.1 ohm&#xb7;cm.

Heterostructure for electronic power components, optoelectronic or photovoltaic components

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Theys, France

Oleg Kononchuck