Entegris, Inc.

Advanced Technology Materials, Inc.

Other

Oleg Byl

Joseph D Sweeney

Ying Tang

Sharad N Yedave

Barry Lewis Chambers

Robert E Kaim

Edward Edmiston Jones

Richard S Ray

Peng Zou

Joseph Robert Despres

Edward A Sturm

Chiranjeevi Pydi

W Karl Olander

Steven E Bishop

David James Eldridge

John Robert Morris

Nathan B Jones

Diego Troya

Steven G Sergi

Chongying Xu

Bryan Clark Hendrix

Jose I Arno

Tianniu Chen

James A Dietz

Frank DiMeo, Jr

William Hunks

Gregory T Stauf

Jeffrey W Neuner

Montray Leavy

Paul J Marganski

Subhash Guddati

Thines Kumar Perumal

James J Mayer

Lin Feng

Joe R Despres

Karl W Olander

Steven Sergi

Described are three-dimensional structures that contain metal-organic-framework adsorbent material and that are prepared by additive manufacturing techniques, as well as methods of preparing the structures by additive manufacturing methods.

Metal-organic-framework-containing bodies and related methods

Described are gas storage medium and methods of storing source gases in the gas storage medium, particularly relating to using hydroxylated metal oxides or hydroxylated metalloid oxides as a storage medium for storing diborane.

Gas storage systems and method thereof

Described are ion implantation devices, systems, and methods, and in particular to an ion source that is useful for generating an aluminum ion beam.

Method and systems useful for producing aluminum ions

Described are storage and dispensing systems and related methods, for the selective dispensing germane (GeH) as a reagent gas from a vessel in which the germane is held in sorptive relationship to a solid adsorbent medium that includes a zeolitic imidazolate framework.

Storage and delivery veseel for storing GeH4, using a zeolitic adsorbent

Described are systems and methods of storing adsorbing diborane on carbon adsorption medium. The invention discloses a vessel for storing diborane. The vessel includes: a vessel interior; microporous carbon adsorbent in the vessel interior; diborane in the vessel interior at least partially adsorbed on the microporous adsorbent. The microporous adsorbent includes slit pores between graphite layers at a graphite layer spacing that increases an activation energy required for diborane degradation relative to an activation energy of degradation of non-adsorbed gaseous diborane at ambient pressure, and at the same temperature.

Systems and methods for storing molecular diborane

The current disclosure is directed to methods and assemblies configured to deliver a mixture of germanium tetrafluoride (GeF) and hydrogen (H) gases to an ion implantation apparatus, so His present in an amount in the range of 25%-67% (volume) of the gas mixture, or the GeFand Hare present in a volume ratio (GeF:H) in the range of 3:1 to 33:67. The use of the Hgas in an amount in mixture or relative to the GeFgas prevents the volatilization of cathode material, thereby improving performance and lifetime of the ion implantation apparatus. Gas mixtures according to the disclosure also result in a significant Gecurrent gain and Wpeak reduction during au ion implantation procedure.

Germanium tetraflouride and hydrogen mixtures for an ion implantation system

A system and method for ion implantation is described, which includes a gas or gas mixture including at least one ionizable gas used to generate ionic species and an arc chamber that includes two or more different arc chamber materials. Using the system ionic species are generated in the arc chamber with liner combination, and one or more desired ionic species display a higher beam current among the ionic species generated, which is facilitated by use of the different materials. In turn improved implantation of the desired ionic species into a substrate can be achieved. Further, the system can minimize formation of metal deposits during system operation, thereby extending source life and promoting improved system performance.

Ion implantation system with mixture of arc chamber materials

Described are plasma immersion ion implantation methods that use multiple precursor gases, particularly for the purpose of controlling an amount of a specific atomic dopant species that becomes implanted into a workpiece relative to other atomic species that also become implanted into the workpiece during the implantation process.

Plasma immersion methods for ion implantation

The current disclosure is directed to methods and assemblies configured to deliver a mixture of germanium tetrafluoride (GeF) and hydrogen (H) gases to an ion implantation apparatus, so His present in an amount in the range of 25%-67% (volume) of the gas mixture, or the GeFand Hare present in a volume ratio (GeF:H) in the range of 3:1 to 33:67. The use of the Hgas in an amount in mixture or relative to the GeFgas prevents the volatilization of cathode material, thereby improving performance and lifetime of the ion implantation apparatus. Gas mixtures according to the disclosure also result in a significant Gecurrent gain and Wpeak reduction during an ion implantation procedure.

Compositions, systems, and methods are described for implanting silicon and/or silicon ions in a substrate, involving generation of silicon and/or silicon ions from corresponding silicon precursor compositions, and implantation of the silicon and/or silicon ions in the substrate.

Silicon implantation in substrates and provision of silicon precursor compositions therefor

An ion source apparatus for ion implantation is described, including an ion source chamber, and a consumable structure in or associated with the ion source chamber, in which the consumable structure includes a solid dopant source material susceptible to reaction with a reactive gas for release of dopant in gaseous form to the ion source chamber, wherein the solid dopant source material comprises gallium nitride, gallium oxide, either of which may be isotopically enriched with respect to a gallium isotope, or combinations thereof.

Ion implantation processes and apparatus using gallium

A method of implanting carbon ions into a target substrate, including: ionizing a carbon containing dopant material to produce a plasma having ions; optionally co-flowing an additional gas or series of gases with the carbon-containing dopant material; and implanting the ions into the target substrate. The carbon-containing dopant material is of the formula CFOHwherein if w=1, then x&#x3e;0 and y and z can take any value, and wherein if w&#x3e;1 then x or y is &#x3e;0, and z can take any value. Such method significantly improves the efficiency of an ion implanter tool, in relation to the use of carbon source gases such as carbon monoxide or carbon dioxide.

Carbon materials for carbon implantation

An ion source apparatus which generates dopant species in a manner enabling low vapor pressure dopant source materials to be employed. The ion source apparatus (), comprising: an ion source chamber (); and a consumable structure in or associated with the ion source chamber (), said consumable structure comprising a solid dopant source material susceptible to reaction with a reactive gas for release of dopant in gaseous form to the ion source chamber. For example, the consumable structure is a dopant gas feed line () comprising a pipe or conduit having an interior layer formed of a solid dopant source material.

Ion implantation processes and apparatus

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Southbury, CT, United States of America

Oleg Byl