Lumileds LLC

Koninklijke Philips Corporation N.v.

Philips Lumileds Lighting Company LLC

Other

Lumileds Holding B.v.

Lumileds Singapore Pte. Ltd.

Vampola, Kenneth

Lawrence, Nathaniel T.

Masui, Hisashi

Shchekin, Oleg

Bhardwaj, Jyoti

Shimizu, Ken

Jin, Frank

Bohmer, Marcel

Mala, Mohiuddin

Oleg Borisovich Shchekin

Peter Josef Schmidt

Hans-Helmut Bechtel

Mark Melvin Butterworth

Hisashi Masui

John Edward Epler

Serge J Bierhuizen

Brendan Jude Moran

Jyoti Kiron Bhardwaj

Gerard Harbers

Michael David Camras

April Dawn Schricker

Ken Shimizu

Han Ho Choi

Decai Sun

Marcel Rene Bohmer

Frank Michael Steranka

Kenneth John Vampola

Kentaro Shimizu

Yourii Martynov

Jeffrey Dellert Kmetec

Patrick Nolan Grillot

Dawei Lu

Gerd Mueller

Rafael Ignacio Aldaz Granell

Debasis Bera

Danielle Chamberlin

Regina Mueller-Mach

Frank Jin

Michael Ragan Krames

Frederic Stephane Diana

Clarisse Mazuir

Nathan Fredrick Gardner

Grigoriy Basin

Walter Mayr

Isaac Wildeson

Gregory Donald Guth

Danielle Russell Chamberlin

Wen Yu

Mark A Pugh

Wouter Anthon Soer

Qingwei Mo

Toni Lopez

Erik Maria Roeling

Franklin Chiang

Thierry De Smet

Niek Van Leth

Hossein Lotfi

Sumit Gangwal

Mei-Ling Kuo

Xiaolin Sun

Lin Li

Nathaniel T Lawrence

Cornelis Reinder Ronda

Nicola Bettina Pfeffer

Aurelien J F David

Gerd O Mueller

Daniel Alexander Steigerwald

Regina B Mueller-Mach

Yu-Chen Shen

Lex Alan Kosowsky

Jerome Chandra Bhat

Ling Zhou

Alexander H Nickel

Norbertus Antonius Maria Sweegers

Erno Fancsali

Stephen Andrew Stockman

Kuochou Tai

Andrei Papou

Gregory W Eng

Ashish Tandon

Jonathan J Wierer

Franklin J Wall, Jr

James Gordon Neff

Erik William Young

Rajat Sharma

Franklin Joseph Wall

Marc Andre De Samber

Antonio Lopez Julia

Luke Gordon

Ashim Shatil Haque

Mohiuddin Mala

Guido Salmaso

Joseph Flemish

Charlene Sun

Ken Davis

Fahong Jin

Emo Fancsali

Robert Zona

Han-Ho Choi

Marcel Bohmer

James G Neff

Kenneth Vampola

Michael R Krames

Mark Pugh

A structure and method of micro-LEDs are described. The micro-LEDs have a GaN semiconductor structure containing a multi-quantum well active region configured to emit light of a visible wavelength range and a multilayer reflector structure that includes a distributed Bragg reflector (DBR) with a maximum reflectance at the visible wavelength range and to reflect the light emitted by the active region towards an emission surface of the semiconductor structure. The multilayer reflector structure also has a protective layer between the DBR and the GaN structure that is transparent to light of visible wavelengths. The multilayer reflector structure also has an absorbing metal layer that absorbs the light of visible wavelengths. A conductive material provides electrically contact to the semiconductor structure.

Narrowband reflector for micro-LED arrays

LED arrays comprise patterned reflective grids that enhance the contrast ratio between adjacent pixels or adjacent groups of pixels in the array. The pattern on the reflective grid may also improve adhesion between the reflective grid and one or more layers of material disposed on and attached to the reflective grid. The reflective grid may be formed, for example, as a reflective metal grid, a grid of dielectric reflectors, or a grid of distributed Bragg reflectors (DBRs). If formed as a metal grid, the reflective grid may provide electrical contact to one side of the LED diode junctions. This specification also discloses fabrication processes for such LED arrays.

Patterned reflective grids for LED arrays and displays

A gas sensing system can allow a gas sample to permeate hollow spaces within a porous scattering material. The porous scattering material can be substantially transparent at an illumination wavelength. An emitter can illuminate the porous scattering material and the gas sample with light having a spectrum that includes the illumination wavelength. A sensor can detect a level of light that has traversed the porous scattering material. Using, for example, the Beer-Lambert Law, the system can determine a concentration of the gas material in the gas sample. The scattering can greatly increase an optical path length through the porous scattering material, compared with a linear dimension of the porous scattering material. The increased optical path length can allow a gas chamber to shrink in size, thereby decreasing a size of the gas sensing system without a corresponding decrease in a sensitivity and/or an accuracy of the system.

Gas sensing with porous scattering material

Systems for apparatuses formed of light emitting devices. Solutions for controlling the off-state appearance of lighting system designs is disclosed. Thermochromic materials are selected in accordance with a desired off-state of an LED device. The thermochromic materials are applied to a structure that is in a light path of light emitted by the LED device. In the off-state the LED device produces a desired off-state colored appearance. When the LED device is in the on-state, the thermochromic materials heat up and become more and more transparent. The light emitted from the device in its on-state does not suffer from color shifting due to the presence of the thermochromic materials. Furthermore, light emitted from the LED device in its on-state does not suffer from attenuation due to the presence of the thermochromic materials. Techniques to select and position thermochromic materials in or around LED apparatuses are presented.

Controlling off-state appearance of a light emitting device

An optical isolation material may be applied to walls of a first cavity and a second cavity in a wafer mesh. A wavelength converting layer may be deposited into the first cavity to create a first segment and into the second cavity to create a second segment. The first segment may be attached to a first light emitting device to create a first pixel and the second segment to a second light emitting device to create a second pixel. The wafer mesh may be removed.

Converter fill for LED array

An inventive light-emitting apparatus comprises an array of multiple light-emitting pixels, and one or more transmissive optical elements positioned at a light-emitting surface of the light-emitting pixel array. One or more of the light-emitting pixels is defective. Each optical element is positioned at a location of a corresponding defective light-emitting pixel, and extends over that defective pixel and laterally at least partly over one or more adjacent pixels. Each optical element transmits laterally at least a portion of light emitted by the adjacent pixels to propagate away from the array from the location of the defective pixel, reducing the appearance of the defective pixel.

Reduction of defective pixel appearance in light-emitting arrays

In a gas sensing system, a light emitter can emit light through a gas sample toward a concave reflective surface. The reflective surface can redirect the emitted light to propagate through the gas sample toward a light sensor. Using, optionally, the Beer-Lambert Law, the system can determine a concentration of the gas material in the gas sample. By selecting a specified shape for the reflective surface, such as a complete or partial ellipsoid, and locating the light emitter and the light sensor in specified locations, such as at one or both foci of the ellipsoid, the gas sensing system can reduce variation in optical path length, from optical path to optical path, in the light that propagates from the light emitter, to the reflective surface, and to the light sensor. Reducing the variation in optical path length can improve an accuracy in determining the concentration of the gas material.

Gas sensing system having quadric reflective surface

In a method according to embodiments of the invention, for a predetermined amount of light produced by a light emitting diode and converted by a phosphor layer comprising a host material and a dopant, and for a predetermined maximum reduction in efficiency of the phosphor at increasing excitation density, a maximum dopant concentration of the phosphor layer is selected.

Wavelength converted light emitting device

A method to make light-emitting diode (LED) units include arranging LEDs in a pattern, forming an optically transparent spacer layer over the LEDs, forming an optically reflective layer over the LEDs, and singulating the LEDs into LED units. The method may further include, after forming the optically transparent spacer layer and before singulating the LEDs, forming a secondary light-emitting layer that conforms to the LEDs, cutting the LEDs to form LED groups having a same arrangement, spacing the LED groups on a support, and forming the optically reflective layer in spaces between the LED groups.

Flip-chip SMT LEDs with variable number of emitting surfaces

A disclosed light-emitting device may provide white light with a cyan gap coinciding with a melanopic sensitivity range and thus having reduced melanopic content. The disclosed light-emitting device may include a light source providing violet or blue light with a peak wavelength under 450 nanometers (nm). The disclosed light-emitting device may include at least one down-converter coupled to and located downstream of the light source and configured with a long-wavelength onset to convert the spectrum of the violet or blue light to generate white light with a spectral power content in a 447-531 nm wavelength range that is less than or equal to 10% of a total spectral power content in a 380-780 nm wavelength range. The disclosed light-emitting device may be incorporated in a light engine system that further includes a control system that controls a drive current to the light-emitting device.

Lighting system having reduced melanopic spectral content

Embodiments of the invention include a semiconductor light emitting device capable of emitting first light having a first peak wavelength and a semiconductor wavelength converting element capable of absorbing the first light and emitting second light having a second peak wavelength. The semiconductor wavelength converting element is attached to a support and disposed in a path of light emitted by the semiconductor light emitting device. The semiconductor wavelength converting element is patterned to include at least two first regions of semiconductor wavelength converting material and at least one second region without semiconductor wavelength converting material disposed between the at least two first regions.

Light emitting device having an optically pumped semiconductor wavelength converting element

Pre-formed wavelength conversion elements are attached to light emitting elements and are shaped to reduce repeated occurrences of total internal reflection. The sides of the shaped elements may be sloped or otherwise shaped so as to introduce a change in the angle of incidence of reflected light upon the light extraction surface of the wavelength conversion element. The pre-formed wavelength conversion elements may be configured to extend over an array of light emitting elements, with features between the light emitting elements that are shaped to reduce repeated occurrences of total internal reflection.

Shaped phosphor to reduce repeated reflections

A semiconductor light emitting device (B,C;) may have a reflective side coating () disposed on a sidewall () of a semiconductor light emitting device structure. Such a device may be fabricated by dicing a semiconductor structure to separate a semiconductor light emitting device structure and then forming a reflective side coating () on a sidewall () of the separated semiconductor light emitting device structure.

Semiconductor light emitting device with reflective side coating

Growing community of inventors

San Francisco, CA, United States of America

Oleg Borisovich Shchekin