Danmarks Tekniske Universitet

Capres A/s

Kla Corporation

Technical University of Denmark

Nil Technology Aps

Atlant 3d Nanosystems Aps

Ole Hansen

Dirch Hjorth Petersen

Erik Vilain Thomsen

Alberto Cagliani

Henrik Hartmann Henrichsen

Kasper Reck

Christian Østergaard

Peter Folmer Nielsen

Anja Boisen

Anders Kristensen

Kresten Yvind

Ib Chorkendorff

Il-Sug Chung

Thor Ansbæk

Theodor Kamp Nielsen

Frederik Westergaard Osterberg

Michael Stenbæk Schmidt

Frederik Westergaard Østerberg

Tomas Rindzevicius

Thomas Pedesen

Kristian Smistrup

Rasmus Schmidt Davidsen

Benny Guralnik

Daniel Bøndergaard Trimarco

Maksym Plakhotnyuk

Boisen Anja

Ivan Kundrata

Karol Fröhlich

Julien Bachmann

Peter Christian Kjærgaard Vesborg

Fei Wang

Frederik Westergaard ØSterberg

Thor ANSBÆK

Theodor Nielsen

Tobias Hedegaard

The invention relates to an atomic layer process printer for material deposition, etching and/or cleaning on an atomic scale in a selective area. The invention further relates to a method for material deposition, etching and/or cleaning on an atomic scale in a selective area using the atomic layer process printer.

Atomic layer process printer

A physical property of a test sample with a conductive or semi-conductive material (line/area/volume) is obtained. Periodic Joule heating is induced within the test sample by passing an AC current across a first pair of probe terminals electrically connected to the test sample, measuring the voltage drop across a second pair of probe terminals electrically connected to the test sample at one and three times the fundamental excitation frequency of the current-conducting terminals, and calculating the temperature-modulated property/properties of the test sample as a function of the potential drop measurement(s). This includes: a) determining a value proportional to the TCR of the test sample, b) a geometric parameter of the test sample (affected by coupling of its TCR to heat transport to/from the test sample), or c) the true resistivity of the test sample at the ambient experimental temperature by subtracting measurable and accountable TCR offset(s).

Measuring temperature-modulated properties of a test sample

A probe for direct nano- and micro-scale electrical characterization of materials and semi conductor wafers. The probe comprises a probe body, a first cantilever extending from the probe body, and a first thermal detector extending from the probe body. The thermal detector is used to position the cantilever with respect to a test sample.

Probe for testing an electrical property of a test sample

The present invention relates to a method of establishing specific electrode positions by providing a multi-point probe and a test sample. The method comprises the measuring or determining of a distance between two of the electrodes of the multi-point probe and establishing a resistance model representative of the test sample. The method further comprises the performing of at least three different sheet resistance measurements and establishing for each of the different sheet resistance measurement a corresponding predicted sheet resistance based on the resistance model. Thereafter the method comprises the establishment of a set of differences constituting the difference between each of the predicted sheet resistance and its corresponding measured sheet resistance, and deriving the specific electrode positions of the multi-point probe on the surface of the test sample by using the distance and performing a data fit by minimizing an error function constituting the sum of the set of differences.

Position correction method and a system for position correction in relation to four probe resistance measurements

The invention relates to a device () for extracting volatile species from a liquid () connected to an inlet of an analysis instrument, such as a mass spectrometer (MS). The device has a chamber (), a membrane () forming a barrier for the liquid at zero differential pressure between the inside and the outside of the chamber, and allowing passage of the volatile species at zero differential pressure between the inside and the outside of the chamber. The device has an inlet capillary channel () to feed in a carrier gas and prevent back-diffusion from the chamber, and an outlet capillary channel () which provides a significant pressure reduction, e.g. from atmospheric pressure in the chamber () to near-vacuum suitable for an MS. The invention combines the best of two worlds, i.e. the fast time-response of a DEMS system and the high sensitivity of a MIMS system, since a differential pumping stage is not needed.

Device for extracting volatile species from a liquid

The present invention relates to a plasma texturing method for silicon based solar cells and the nanostructured silicon solar cells produced thereof. The silicon based solar cell comprises a silicon substrate having in at least part of its surface conical shaped nanostructures having an average height between 200 and 450 nm and a pitch between 100 and 200 nm, thereby achieving low reflectance and minimizing surface charge recombination.

Nanostructured silicon based solar cells and methods to produce nanostructured silicon based solar cells

The present invention relates to an all-optical pressure sensor comprising a waveguide accommodating a distributed Bragg reflector. Pressure sensing can then be provided by utilizing effective index modulation of the waveguide and detection of a wavelength shift of light reflected from the Bragg reflector. Sound sensing may also be provided thereby having an all-optical microphone. One embodiment of the invention relates to an optical pressure sensor comprising at least one outer membrane and a waveguide, the waveguide comprising at least one core for confining and guiding light, at least one distributed Bragg reflector located in said at least one core, and at least one inner deflecting element forming at least a part of the core, wherein the pressure sensor is configured such that the geometry and/or dimension of the at least one core is changed when the at least one outer membrane is submitted to pressure.

All-optical pressure sensor

A method for determining an electrical property of a test sample having a conductive surface portion with an electrical boundary includes (a) determining a first distance between the single position and the boundary by (1) contacting the test sample with a first four-contact configuration of a multi-contact probe at the single position; (2) applying a magnetic field at the single position; (3) measuring first and second resistances from which to calculate a first resistance difference; (4) measuring third and fourth resistances from which to calculate a second resistance difference; (5) defining a first relation including parameters representing the first and second resistance differences and the first distance; (6) determining the first distance by using the first and second resistance differences in the first relation; (b) repeating steps (1)-(6) with a second four-contact configuration to determine a second distance between the single position and the boundary; (c) defining a second relation including the electrical property and a fourth parameter representing the second distance; and (d) employing the second distance as the fourth parameter in the second relation for determining the electrical property.

Single-position hall effect measurements

The present invention relates to an all-optical sensor utilizing effective index modulation of a waveguide and detection of a wavelength shift of reflected light and a force sensing system accommodating said optical sensor. One embodiment of the invention relates to a sensor system comprising at least one multimode light source, one or more optical sensors comprising a multimode sensor optical waveguide accommodating a distributed Bragg reflector, at least one transmitting optical waveguide for guiding light from said at least one light source to said one or more multimode sensor optical waveguides, a detector for measuring light reflected from said Bragg reflector in said one or more multimode sensor optical waveguides, and a data processor adapted for analyzing variations in the Bragg wavelength of at least one higher order mode of the reflected light.

MEMS optical sensor

Wavelength sweepable laser source is disclosed, wherein the laser source is a semiconductor laser source adapted for generating laser light at a lasing wavelength. The laser source comprises a substrate, a first reflector, and a second reflector. The first and second reflector together defines an optical cavity, and are arranged to support light oscillation in the optical cavity along an optical path in a direction normal to the substrate. The optical cavity comprises a void in the optical path. The second reflector is resiliently suspended by a suspension in a distance from the first reflector and having a rest position, the second reflector and suspension together defining a microelectromechanical MEMS oscillator. The MEMS oscillator has a resonance frequency and is adapted for oscillating the second reflector on either side of the rest position. The laser source further comprises electrical connections adapted for applying an electric field to the MEMS oscillator. Furthermore, a laser source system and a method of use of the laser source are disclosed.

Wavelength sweepable laser source

A method of obtaining an electrical property of a test sample, comprising a non-conductive area and a conductive or semi-conductive test area, by performing multiple measurements using a multi-point probe. The method comprising the steps of providing a magnetic field having field lines passing perpendicularly through the test area, bringing the probe into a first position on the test area, the conductive tips of the probe being in contact with the test area, determining a position for each tip relative to the boundary between the non-conductive area and the test area, determining distances between each tip, selecting one tip to be a current source positioned between conductive tips being used for determining a voltage in the test sample, performing a first measurement, moving the probe and performing a second measurement, calculating on the basis of the first and second measurement the electrical property of the test area.

Method of determining an electrical property of a test sample

The present invention relates to a nano-imprinting stamp for imprinting nanometer-sized to mm-sized structures, the stamp () having a base part and a first and a second imprinting section (), the first and second imprinting sections having a lithographic pattern () intended for imprinting in a receiving substrate. In a first aspect, the first and the second imprinting sections () are independently displaceable in a direction substantially parallel to an imprinting direction of the imprinting stamp. In a second aspect, the first and the second imprinting sections () are mechanically weakly coupled in a direction substantially parallel to an imprinting direction of the imprinting stamp. The stamp limits the effect of imperfections in or on the substrate to be imprinted with a lithographic pattern () and imperfections in or on the stamp and any combinations of such imperfections by localising the bending of the stamp to the base part () in-between the imprinting sections ().

Flexible nano-imprint stamp

Growing community of inventors

Hørsholm, Denmark

Ole Hansen